Professor Mark Hopkinson

PhD, BSc

Department of Electronic and Electrical Engineering

Departmental Director of Research & Innovation

Professor in Electrical Engineering

m.hopkinson@sheffield.ac.uk
+44 114 222 5385

Full contact details

Professor Mark Hopkinson
Department of Electronic and Electrical Engineering

Profile

I received my BSc degree from the University of Birmingham and my PhD from the University of Sheffield for a thesis entitled “Properties of hydrogenated Amorphous Silicon Nanostructures”).

After three years as a PDRA at the University of Warwick working on SiGe epitaxy, I returned to Sheffield in 1990 to join the EPSRC National Centre for III–V Technologies, first as a PDRA and then as research fellow.

In 1988 I spent a half year working as a visiting researcher at the University of Minnesota. In 2000 I joined Marconi PLC as a senior scientist working on GaAs microwave devices.

In 2003, I returned to the University of Sheffield as a senior research fellow (staff) and in 2007 was awarded a personal chair.

My research is focussed on semiconductor epitaxy; a field in which I have published over 500 papers, made over 200 conference presentations, over 30 invited talks, produced several book chapters and a few editorials.

Around 15 of my publications have 100 citations. For over a decade I have served on the major conference steering committees in my field.

I have also received two international awards: a Pierre de Fermat fellowship from France and the Huang Kun Medal from the Beijing Institute of Semiconductors.

Starting with silicon MBE at Warwick University, I moved on to work on III-V materials from 1990 onwards and now have almost 30 years’ experience in MBE with particular emphasis on III-V semiconductor nanostructuring (including quantum dots, nanowires, selective area growth etc)

My current research interests include novel electronic materials, semiconductor nanostructures, electronics-photonics integration, ultrafast photonic devices and the application of photonics for sensing and healthcare applications.

Recent work has focussed on methods for the in-situ patterning of semiconductors, work which includes the EU Horizon 2020 project “Nanostencil” which I am coordinating.

The project is focused on the application of laser interference lithography to pattern semiconductor surfaces during the growth process. Other areas of activity include high speed semiconductor optical switching and novel quantum photonic devices.

Qualifications

PhD (Physics), Sheffield (1990)
BSc (Physics), Birmingham (1984)

Research interests

Semiconductor Epitaxy (MBE)
New methods for the growth, processing and characterisation of III-V nanostructures for
advanced photonic and electronic devices
Ultrafast photonic devices

Publications

Books

Hopkinson M (2005) Microscopy of semiconducting materials. Springer Verlag.
Hopkinson M (1989) Photoluminescence in hydrogenated amorphous silicon based materials and heterostructures.

Journal articles

Petticrew J, Ji Y, Han IS, White B, Evirgen A, Reverchon J-L, Hopkinson M, Tan CH & Ng JS (2023) Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb Type-II superlattice photodiodes. Semiconductor Science and Technology, 38(2).
Han IS, Wang Y-R & Hopkinson M (2021) Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning. Applied Physics Letters, 118(14), 142101-142101.
Behera S, Fry PW, Francis H, Farrer I, Jin C & Hopkinson M (2020) Photonic integration of uniform GaAs nanowires in hexagonal and honeycomb lattice for broadband optical absorption. AIP Advances, 10(10).
Wang Y-R, Han IS, Jin C-Y & Hopkinson M (2020) Formation of laterally ordered quantum dot molecules by in situ nanosecond laser interference. Applied Physics Letters, 116(20), 201901-201901.
Han IS, Kim JS, Noh SK, Lee SJ & Hopkinson M (2020) Tracing the two- to three-dimensional transition in InAs/GaAs sub-monolayer quantum dot growth. Applied Surface Science, 526, 146713-146713.
Wang YR, Han IS, Jin C-Y & Hopkinson M (2020) Precise Arrays of Epitaxial Quantum Dots Nucleated by In Situ Laser Interference for Quantum Information Technology Applications. ACS Applied Nano Materials, 3(5), 4739-4746.
Behera S, Fry PW, Francis H, Jin C-Y & Hopkinson M (2020) Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications. Scientific Reports, 10(1). View this article in WRRO
Francis H, Zhang X-D, Chen S, Yu J, Che K-J, Hopkinson M & Jin C (2020) Optical frequency comb generation via cascaded intensity and phase photonic crystal modulators. IEEE Journal of Selected Topics in Quantum Electronics, 1-1.
Chen S, Francis H, Ho C-H, Wang Y-R, Che K-J, Hopkinson M & Jin C-Y (2020) Control of quality factor in laterally coupled vertical cavities. IET Optoelectronics, 14(3), 100-103.
Francis H, Chen S, Che K-J, Hopkinson M & Jin C (2019) Photonic crystal cavity-based intensity modulation for integrated optical frequency comb generation. Crystals, 9(10). View this article in WRRO
Waeber AM, Gillard G, Ragunathan G, Hopkinson M, Spencer P, Ritchie DA, Skolnick MS & Chekhovich EA (2019) Pulse control protocols for preserving coherence in dipolar-coupled nuclear spin baths. Nature Communications, 10(1). View this article in WRRO
Francis H, Chen S, Ho C-H, Che K-J, Wang Y-R, Hopkinson M & Jin C-Y (2019) Generation of optical frequency combs using a photonic crystal cavity. IET Optoelectronics, 13(1), 23-26. View this article in WRRO
Wang Y-R, Jin C-Y, Ho C-H, Chen S, Francis H & Hopkinson M (2019) Thermodynamic processes on a semiconductor surface during in-situ multi-beam laser interference patterning. IET Optoelectronics, 13(1), 7-11. View this article in WRRO
Biccari F, Boschetti A, Pettinari G, La China F, Gurioli M, Intonti F, Vinattieri A, Sharma MS, Capizzi M, Gerardino A , Businaro L et al (2018) Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination. Advanced Materials, 30(21). View this article in WRRO
Biccari F, Boschetti A, Pettinari G, La China F, Gurioli M, Intonti F, Vinattieri A, Sharma M, Capizzi M, Gerardino A , Businaro L et al (2018) Quantum Dots: Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination (Adv. Mater. 21/2018). Advanced Materials, 30(21), 1870147-1870147.
Pettinari G, Gerardino A, Businaro L, Polimeni A, Capizzi M, Hopkinson M, Rubini S, Biccari F, Intonti F, Vinattieri A , Gurioli M et al (2017) A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides. Microelectronic Engineering, 174, 16-19. View this article in WRRO
Hylton NP, Hinrichsen TF, Vaquero-Stainer AR, Yoshida M, Pusch A, Hopkinson M, Hess O, Phillips CC & Ekins-Daukes NJ (2016) Photoluminescence upconversion at interfaces driven by a sequential two-photon absorption mechanism. Physical Review B, 93(23). View this article in WRRO
Waeber AM, Hopkinson M, Farrer I, Ritchie DA, Nilsson J, Stevenson RM, Bennett AJ, Shields AJ, Burkard G, Tartakovskii AI , Skolnick MS et al (2016) Few-second-long correlation times in a quantum dot nuclear spin bath probed by frequency-comb nuclear magnetic resonance spectroscopy. Nature Physics, 12(7), 688-693. View this article in WRRO
Chekhovich EA, Hopkinson M, Skolnick MS & Tartakovskii AI (2015) Suppression of nuclear spin bath fluctuations in self-assembled quantum dots induced by inhomogeneous strain. Nature Communications, 6. View this article in WRRO
Balakrishnan N, Pettinari G, Makarovsky O, Hopkinson M & Patanè A (2014) Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes. Applied Physics Letters, 104(24).
Walther T, Hopkinson M, Daneu N, Recnik A, Ohno Y, Inoue K & Yonenaga I (2014) How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy. Journal of Materials Science, 49(11), 3898-3908. View this article in WRRO
Van Hattem B, Corfdir P, Brereton P, Pearce P, Graham AM, Stanley MJ, Hugues M, Hopkinson M & Phillips RT (2013) Photoluminescence in Tilted Magnetic Field of Triply Negatively Charged Excitons Hybridized with a Continuum. ACTA PHYSICA POLONICA A, 124(5), 798-800.
Latkowska M, Kudrawiec R, Misiewicz J, Galvão Gobato Y, Henini M & Hopkinson M (2013) Enhancement of activation energies of sharp photoluminescence lines for GaInNAs quantum wells due to quantum confinement. Journal of Physics D: Applied Physics, 46(40).
Hopkinson M, Martin T & Smowton P (2013) III-V semiconductor devices integrated with silicon. Semiconductor Science and Technology, 28(9).
Van Hattem B, Corfdir P, Brereton P, Pearce P, Graham AM, Stanley MJ, Hugues M, Hopkinson M & Phillips RT (2013) From the artificial atom to the Kondo-Anderson model: Orientation-dependent magnetophotoluminescence of charged excitons in InAs quantum dots. Physical Review B, 87(20). View this article in WRRO
Chaqmaqche FAI, Mazzucato S, Balkan N, Hugues M & Hopkinson M (2013) Gain characteristic of dilute nitride HELLISH-VCSOA for 1.3 μm wavelength operation. Physica Status Solidi (C) Current Topics in Solid State Physics, 10(4), 564-566.
Breuer S, Rossetti M, Drzewietzki L, Montrosset I, Krakowski M, Hopkinson M & Elsäßsser W (2013) Dual-state absorber-photocurrent characteristics and bistability of two-section quantum-dot lasers. IEEE Journal on Selected Topics in Quantum Electronics, 19(5).
Welna K, Reardon CP, O'Faolain L, Krauss TF, Hugues M & Hopkinson M (2013) Photonic crystal nanocavities in GaAs/AlGaAs with oxidised bottom cladding. Photonics and Nanostructures - Fundamentals and Applications.
Larsen K, Austin D, Sandall IC, Davies DG, Revin DG, Cockburn JW, Adawi AM, Airey RJ, Fry PW, Hopkinson M & Wilson LR (2012) Electrical modulation of the optical properties of mid-infrared metamaterials. Applied Physics Letters, 101(25).
Robertson J, Founta S, Hughes M, Hopkinson M, Ramsay AJ, Skolnick MS & Shih CK (2012) Polarization-resolved resonant fluorescence of a single semiconductor quantum dot. Applied Physics Letters, 101(25).
Trushkin S, Kamiska A, Trzeciakowski W, Hopkinson M & Suchocki A (2012) InAsP-based quantum wells as infrared pressure gauges for use in a diamond anvil cell. Journal of Applied Physics, 112(7).
Zajac JM, Langbein W, Hugues M & Hopkinson M (2012) Polariton states bound to defects in GaAs/AlAs planar microcavities. Physical Review B, 85(16). View this article in WRRO
Chaqmaqchee FAI, Mazzucato S, Sun Y, Balkan N, Tiras E, Hugues M & Hopkinson M (2012) Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 μm operation. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 177(10), 739-743.
Breuer S, Rossetti M, Drzewietzki L, Montrosset I, Hopkinson M & Elsässer W (2012) Intra-cavity absorber photocurrent characteristics of a quantum dot laser emitting on two emission-states: Experiment and simulation. Proceedings of SPIE - The International Society for Optical Engineering, 8432.
Gargallo-Caballero R, Guzmn A, Ulloa JM, Hierro A, Hopkinson M, Luna E & Trampert A (2012) Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots. Journal of Applied Physics, 111(8).
Makarovsky O, Vdovin EE, Patané A, Eaves L, Makhonin MN, Tartakovskii AI & Hopkinson M (2012) Laser location and manipulation of a single quantum tunneling channel in an InAs quantum dot. Physical Review Letters, 108(11).
Bhattacharyya J, Zybell S, Winnerl S, Helm M, Hopkinson M, Wilson LR & Schneider H (2012) In-plane interdot carrier transfer in InAs/GaAs quantum dots. Applied Physics Letters, 100(15).
Chaqmaqchee FAI, Mazzucato S, Sun Y, Balkan N, Tiras E, Hugues M & Hopkinson M (2012) Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3 μm operation. Materials Science and Engineering B.
Nuytten T, Hayne M, Bansal B, Liu HY, Hopkinson M & Moshchalkov VV (2011) Charge separation and temperature-induced carrier migration in Ga1-xInxNyAs1-y multiple quantum wells. PHYS REV B, 84(4).
Jin CY, Kojima O, Kita T, Wada O & Hopkinson M (2011) Observation of phase shifts in a vertical cavity quantum dot switch. APPL PHYS LETT, 98(23).
Chia CK, Suryana M & Hopkinson M (2011) In situ control and monitoring of photonic device intermixing during laser irradiation. OPT EXPRESS, 19(10), 9535-9540.
Latkowska M, Kudrawiec R, Sek G, Misiewicz J, Ibanez J, Henini M & Hopkinson M (2011) Thermal quenching of single localized excitons in GaInNAs layers. APPL PHYS LETT, 98(13).
Chaqmaqchee FAI, Mazzucato S, Oduncuoglu M, Balkan N, Sun Y, Gunes M, Hugues M & Hopkinson M (2011) GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 mu m operation. NANOSCALE RES LETT, 6. View this article in WRRO
Jones BD, Oxborrow M, Astratov VN, Hopkinson M, Tahraoui A, Skolnick MS & Fox AM (2011) Splitting and lasing of whispering gallery modes in quantum dot micropillars. Optics InfoBase Conference Papers.
Brereton P, Wu Y, Piper IM, Ediger M, Schmidgall ER, Phillips RT, Eastham PR, Hugues M & Hopkinson M (2011) Robust optical inversion of the excitonic population of InGaAs quantum dots via adiabatic rapid passage. Optics InfoBase Conference Papers.
Chaqmaqchee FAI, Mazzucato S, Oduncuoglu M, Balkan N, Sun Y, Gunes M, Hugues M & Hopkinson M (2011) Gainnas-based hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation. Nanoscale Research Letters, 6, 1-7.
Bhattacharyya J, Wagner M, Helm M, Hopkinson M, Wilson LR & Schneider H (2011) Direct evidence of long lived trapped carriers in InGaAs/GaAs quantum dots studied using terahertz-activated luminescence measurements. AIP Conference Proceedings, 1399, 593-594.
Brossard FSF, Xu XL, Williams DA, Hadjipanayi M, Hugues M, Hopkinson M, Wang X & Taylor RA (2011) Strongly coupled single quantum dot in a photonic crystal waveguide cavity. AIP Conference Proceedings, 1399, 1017-1018.
Shafi M, Mari RH, Khatab A, Henini M, Polimeni A, Capizzi M & Hopkinson M (2011) Deep levels in H-irradiated GaAs 1-xN x (x < 0.01) grown by molecular beam epitaxy. Journal of Applied Physics, 110(12).
Ediger M, Wilson AM, Piper IM, Phillips RT, Hugues M & Hopkinson M (2011) 3D g-factor mapping: Fine structure effects in single quantum dots. AIP Conference Proceedings, 1399, 441-442.
Wu Y, Piper IM, Ediger M, Brereton P, Schmidgall ER, Phillips RT, Eastham PR, Hugues M & Hopkinson M (2011) Adiabatic rapid passage on a single exciton. AIP Conference Proceedings, 1399, 491-492.
Latkowska M, Kudrawiec R, Sek G, Misiewicz J, Ibanez J, Hopkinson M & Henini M (2011) Micro-photoluminescence of GaInNAs layers grown on GaAs substrates of various crystallographic orientations. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(5), 1655-1658.
Chaqmaqchee FAI, Mazzucato S, Oduncuoglu M, Balkan N, Sun Y, Gunes M, Hugues M & Hopkinson M (2011) Ano express open accesgainnas-based hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation. Nanoscale Research Letters, 6(1), 1-7.
Breuer S, Rossetti M, Drzewietzki L, Bardella P, Montrosset I, Hopkinson M & Elsässer W (2011) Extended ground-state and excited-state emission-state control in a mode-locked two-section quantum dot laser. International Conference on Transparent Optical Networks.
Brereton P, Wu Y, Piper IM, Ediger M, Schmidgall ER, Phillips RT, Eastham PR, Hugues M & Hopkinson M (2011) Robust optical inversion of the excitonic population of InGaAs quantum dots via adiabatic rapid passage. 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011.
Jones BD, Oxborrow M, Astratov VN, Hopkinson M, Tahraoui A, Skolnick MS & Fox AM (2011) Splitting and lasing of whispering gallery modes in quantum dot micropillars. 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011.
Drzewietzki L, The GAP, Gioannini M, Breuer S, Montrosset I, Elsasser W, Hopkinson M & Krakowski M (2010) Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser. OPT COMMUN, 283(24), 5092-5098.
Mar JD, Xu XL, Sandhu JS, Irvine AC, Hopkinson M & Williams DA (2010) Electrical control of fine-structure splitting in self-assembled quantum dots for entangled photon pair creation. APPL PHYS LETT, 97(22).
Jin CY, Kojima O, Inoue T, Kita T, Wada O, Hopkinson M & Akahane K (2010) Detailed Design and Characterization of All-Optical Switches Based on InAs/GaAs Quantum Dots in a Vertical Cavity. IEEE J QUANTUM ELECT, 46(11), 1582-1589.
Jones BD, Oxborrow M, Astratov VN, Hopkinson M, Tahraoui A, Skolnick MS & Fox AM (2010) Splitting and lasing of whispering gallery modes in quantum dot micropillars.. Opt Express, 18(21), 22578-22592.
Brossard FSF, Xu XL, Williams DA, Hadjipanayi M, Hugues M, Hopkinson M, Wang X & Taylor RA (2010) Strongly coupled single quantum dot in a photonic crystal waveguide cavity. APPL PHYS LETT, 97(11).
Piper IM, Eastham PR, Ediger M, Wilson AM, Wu Y, Hugues M, Hopkinson M & Phillips RT (2010) Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation. Journal of Physics: Conference Series, 245(1). View this article in WRRO
Breuer S, Rossetti M, Elsasser W, Drzewietzki L, Bardella P, Montrosset I, Krakowski M & Hopkinson M (2010) Reverse-emission-state-transition mode locking of a two-section InAs/InGaAs quantum dot laser. APPL PHYS LETT, 97(7).
Bhattacharyya J, Wagner M, Helm M, Hopkinson M, Wilson LR & Schneider H (2010) Terahertz activated luminescence of trapped carriers in InGaAs/GaAs quantum dots. APPL PHYS LETT, 97(3).
King PDC, Veal TD, McConville CF, Zuniga-Perez J, Munoz-Sanjose V, Hopkinson M, Rienks EDL, Jensen MF & Hofmann P (2010) Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers. PHYS REV LETT, 104(25).
Jin CY, Ohta S, Hopkinson M, Kojima O, Kita T & Wada O (2010) Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector. APPL PHYS LETT, 96(15).
Collins RJ, Clarke PJ, Fernandez V, Gordon KJ, Makhonin MN, Timpson JA, Tahraoui A, Hopkinson M, Fox AM, Skolnick MS & Buller GS (2010) Quantum key distribution system in standard telecommunications fiber using a short wavelength single photon source. J APPL PHYS, 107(7).
Zhang ZY, Jiang Q, Hopkinson M & Hogg RA (2010) Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes.. Opt Express, 18(7), 7055-7063.
Bastiman F, Cullis AG, Hopkinson M & Briston KJ (2010) Two step optimized process for scanning tunneling microscopy tip fabrication. J VAC SCI TECHNOL B, 28(2), 371-375.
Jiang Q, Zhang ZY, Hopkinson M & Hogg RA (2010) High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 mu m. ELECTRON LETT, 46(4), 295-U49.
Breuer S, Elsasser W & Hopkinson M (2010) State-switched modelocking of two-segment quantum dot laser via self-electro-optical quantum dot absorber. ELECTRON LETT, 46(2), 161-U87.
Breuer S, Rossetti M, Elsässer W, Drzewietzki L, Bardella P, Montrosset I & Hopkinson M (2010) Reverse ground-state excited-state emission transition dynamics in two-section quantum dot semiconductor lasers: Simultaneous two-state mode-locking and state-switching via a resistor self-electro-optic effect device (SEED). Conference Digest - IEEE International Semiconductor Laser Conference, 65-66.
Haxha V, Drouzas I, Ulloa M, Bozkurt M, Koenraad PM, Mowbray J, Liu HY, Steer MJ, Hopkinson M & Migliorato MA (2010) Control of strain in GaSbAs/InAs/GaAs quantum dots. Journal of Physics: Conference Series, 244.
Breuer S, Rossetti M, Elsässer W, Drzewietzki L, Bardella P, Montrosset I, Krakowski M & Hopkinson M (2010) Two-state passive mode-locking of quantum dot semiconductor lasers: Classical state scenario and novel reverse state dynamics. 2010 12th International Conference on Transparent Optical Networks, ICTON 2010.
Jin CY, Kojima O, Inoue T, Kita T, Wada O, Hopkinson M & Akahane K (2010) Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices. Proceedings of SPIE - The International Society for Optical Engineering, 7610.
Breuer S, Rossetti M, Elsässer W, Drzewietzki L, Bardella P, Montrosset I, Krakowski M & Hopkinson M (2010) Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: Mode-locking and state-switching. Proceedings of SPIE - The International Society for Optical Engineering, 7720.
Jin CY, Kojima O, Inoue T, Ohta S, Kita T, Wada O, Hopkinson M & Akahane K (2010) All-optical switch using InAs quantum dots in a vertical cavity. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 249-252.
Brossard FSF, Xu XL, Williams DA, Hadjipanayi M, Hugues M, Hopkinson M, Wang X & Taylor RA (2010) Strongly coupled single quantum dot in a photonic crystal waveguide cavity. Applied Physics Letters, 97(11).
Hasbullah NF, Hopkinson M, Alexander RR, Hogg RA, David JPR, Badcock TJ & Mowbray DJ (2010) Electroluminescence studies of modulation p-doped quantum dot laser structures. IEEE Journal of Quantum Electronics, 46(12), 1847-1853.
Walther T & Hopkinson M (2010) Quantitative investigation of the onset of islanding in strained layer epitaxy of InAs/GaAs by X-ray mapping in STEM. Journal of Physics: Conference Series, 209.
Bastiman F, Cullis AG & Hopkinson M (2010) InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope. Journal of Physics: Conference Series, 209.
Bastiman F, Hogg R, Skolnick M, Cullis AG & Hopkinson M (2010) Temperature dependence of Ga-assisted oxide desorption on GaAs(001). Journal of Physics: Conference Series, 209.
Krstajić N, Smith LE, Matcher SJ, Childs DTD, Bonesi M, Greenwood PDL, Hugues M, Kennedy K, Hopkinson M, Groom KM , MacNeil S et al (2010) Quantum dot superluminescent diodes for optical coherence tomography: Skin imaging. IEEE Journal on Selected Topics in Quantum Electronics, 16(4), 748-754.
Greenwood PDL, Childs DTD, Kennedy K, Groom KM, Hugues M, Hopkinson M, Hogg RA, Krstajić N, Smith LE, Matcher SJ , Bonesi M et al (2010) Quantum dot superluminescent diodes for optical coherence tomography: Device engineering. IEEE Journal on Selected Topics in Quantum Electronics, 16(4), 1015-1022. View this article in WRRO
Kehoe T, Ediger M, Phillips RT & Hopkinson M (2010) Cryogenic confocal microscopy with rotation in a magnetic field. REV SCI INSTRUM, 81(1).
Chia CK, Suryana M, Zhao W, Low HY & Hopkinson M (2009) Direct imprinting of SiO2 waveguide structures on GaAs and its application in InAs/GaAs quantum dot intermixing. International Journal of Nanoscience, 8(1-2), 107-111.
Bastiman F, Cullis AG & Hopkinson M (2009) InAs/GaAs(001) wetting layer formation observed in situ by concurrent MBE and STM. SURF SCI, 603(24), 3439-3444.
Jang YD, Park J, Lee D, Mowbray DJ, Skolnick MS, Liu HY, Hopkinson M & Hogg RA (2009) Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots. APPL PHYS LETT, 95(17).
Chia CK, Suryana M & Hopkinson M (2009) Thermal runaway and optical efficiency in InAs/GaAs quantum dot lasers. APPL PHYS LETT, 95(14).
Bastiman F, Cullis AG & Hopkinson M (2009) As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy. J CRYST GROWTH, 311(20), 4478-4482.
Haxha V, Drouzas I, Ulloa JM, Bozkurt M, Koenraad PM, Mowbray DJ, Liu HY, Steer MJ, Hopkinson M & Migliorato MA (2009) Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer. PHYS REV B, 80(16).
Berthelot A, Cassabois G, Voisin C, Delalande C, Ferreira R, Roussignol P, Skiba-Szymanska J, Kolodka R, Tartakovskii AI, Hopkinson M & Skolnick MS (2009) Voltage-controlled motional narrowing in a semiconductor quantum dot. NEW J PHYS, 11.
Herrera M, Ramasse QM, Morgan DG, Gonzalez D, Pizarro J, Yanez A, Galindo P, Garcia R, Du MH, Zhang SB , Hopkinson M et al (2009) Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs. PHYS REV B, 80(12).
Ramsay AJ, Boyle SJ, Godden TM, Kolodka RS, Khatab AFA, Oliveira JBB, Skiba-Szymanska J, Liu HY, Hopkinson M, Fox AM & Skolnick MS (2009) Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole. SOLID STATE COMMUN, 149(35-36), 1458-1465. View this article in WRRO
Bastiman F, Cullis AG & Hopkinson M (2009) GaAs(001) (2 x 4) to c(4 x 4) transformation observed in situ by STM during As flux irradiation. SURF SCI, 603(16), 2398-2402.
Blazek M, Elsasser W, Hopkinson M, Resneau P, Krakowski M, Rossetti M, Bardella P, Gioannini M & Montrosset I (2009) Coherence function control of Quantum Dot Superluminescent Light Emitting Diodes by frequency selective optical feedback. OPT EXPRESS, 17(16), 13365-13372.
Sanchez AM, Beanland R, Hasbullah NF, Hopkinson M & David JPR (2009) Correlation between defect density and current leakage in InAs/GaAs quantum dot-in-well structures. J APPL PHYS, 106(2).
Jin CY, Kojima O, Kita T, Wada O, Hopkinson M & Akahane K (2009) Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity. APPL PHYS LETT, 95(2).
Childs D, Groom KM, Ray SK, Liu HY, Hopkinson M & Hogg RA (2009) Flat-topped emission centred at 1 250 nm from quantum dot superluminescent diodes. S AFR J SCI, 105(7-8), 276-277.
Boyle SJ, Ramsay AJ, Fox AM, Skolnick MS, Heberle AP & Hopkinson M (2009) Beating of exciton-dressed states in a single semiconductor InGaAs/GaAs quantum dot.. Phys Rev Lett, 102(20), 207401. View this article in WRRO
Greenwood PDL, Childs DTD, Groom KM, Stevens BJ, Hopkinson M & Hogg RA (2009) Tuning Superluminescent Diode Characteristics for Optical Coherence Tomography Systems by Utilizing a Multicontact Device Incorporating Wavelength-Modulated Quantum Dots. IEEE J SEL TOP QUANT, 15(3), 757-763.
Groom KM, Stevens BJ, Assamoi PJ, Roberts JS, Hugues M, Childs DTD, Alexander RR, Hopkinson M, Helmy AS & Hogg RA (2009) Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer. IEEE J SEL TOP QUANT, 15(3), 819-827. View this article in WRRO
Patane A, Allison G, Eaves L, Hopkinson M, Hill G & Ignatov A (2009) Tailoring the electrical conductivity of GaAs by nitrogen incorporation. J PHYS-CONDENS MAT, 21(17).
Judson PDL, Groom KM, Childs DTD, Hopkinson M & Hogg RA (2009) Multi-section quantum dot superluminescent diodes for spectral shape engineering. IET OPTOELECTRONICS, 3(2), 100-104.
Judson PDL, Groom KM, Childs DTD, Hopkinson M, Krstajic N & Hogg RA (2009) Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode. MICROELECTRONICS JOURNAL, 40(3), 588-591.
Nabavi E, Badcock TJ, Nuytten T, Liu HY, Hopkinson M, Moshchalkov VV & Mowbray DJ (2009) Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots. J APPL PHYS, 105(5). View this article in WRRO
Makhonin MN, Skiba-Szymanska J, Skolnick MS, Liu HY, Hopkinson M & Tartakovskii AI (2009) Voltage-controlled nuclear polarization switching in a single InxGa1-xAs quantum dot. PHYS REV B, 79(12).
Zhang SY, Revin DG, Cockburn JW, Kennedy K, Krysa AB & Hopkinson M (2009) lambda similar to 3.1 mu m room temperature InGaAs/AlAsSb/InP quantum cascade lasers. APPL PHYS LETT, 94(3).
Resneau P, Enard A, Robert Y, Calligaro M, Krakowski M, Hopkinson M, Bardella P, Gioannini M, Montrosset I, Rossetti M , Blazek M et al (2009) High power performances of broad bandwidths superluminescent diodes (SLDs) based on chirped-quantum-dot structures operating at 1100 and 1200 nm for optical coherence tomography (OCT) applications. Optics InfoBase Conference Papers.
Blazek M, ElsaBer W, Hopkinson M, Resneau P & Krakowski M (2009) Controlling the coherence properties of quantum dot superluminescent light emitting diodes via frequency selective optical feedback. Optics InfoBase Conference Papers.
Drzewietzki L, Thé G, Breuer S, Gioannini M, Els̈ßer W, Mon-trosset I, Hopkinson M & Krakowski M (2009) Joint theoretical and experimental investigations of the CW lasing and turn-on dynamics of a quantum-dot semiconductor laser. Optics InfoBase Conference Papers.
Oulton R, Jones BD, Lam S, Chalcraft ARA, Szymanski D, O'Brien D, Krauss TF, Sanvitto D, Fox AM, Whittaker DM , Hopkinson M et al (2009) Cavity-enhanced polarization control and observation of off-resonant coupling in quantum dot nanocavities. Optics InfoBase Conference Papers.
(2009) Picosecond coherent control of dressed states in a single quantum dot. Optics InfoBase Conference Papers.
Jin CY, Kojima O, Kita T, Wada O, Hopkinson M & Akahane K (2009) Quantum dots in a vertical cavity for all-optical switching devices. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 406-407.
Gargallo-Caballero R, Guzmán A, Hopkinson M, Ulloa JM, Hierro A & Calleja E (2009) Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(6), 1441-1444.
Resneau P, Enard A, Robert Y, Calligaro M, Krakowski M, Hopkinson M, Bardella P, Gioannini M, Rossetti M, Montrosset I , Blazek M et al (2009) High power performances of broad bandwidths superluminescent diodes (SLDs) based on chirped-quantum-dot structures operating at 1100 and 1200 nm for optical coherence tomography (OCT) applications. CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
Blazek M, Elsäßer W, Hopkinson M, Resneau P & Krakowski M (2009) Controlling the coherence properties of quantum dot superluminescent light emitting diodes via frequency selective optical feedback. CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
Drzewietzki L, Thé G, Breuer S, Gioannini M, Elsäßer W, Montrosset I, Hopkinson M & Krakowski M (2009) Joint theoretical and experimental investigations of the cw lasing and turn-on dynamics of a quantum-dot semiconductor laser. CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
Shafi M, Mari RH, Henini M, Taylor D & Hopkinson M (2009) Electrical properties of nitrogen-related defects in n-type GaAsN grown by molecular-beam epitaxy. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(12), 2652-2654.
Qu F, Monte AFG & Hopkinson M (2009) Carrier escape dynamics in multilayered self-assembled InAs/GaAs quantum dots. AIP Conference Proceedings, 1199, 293-294.
Oulton R, Jones BD, Lam S, Chalcraft ARA, Szymanski D, O'brien D, Krauss TF, Sanvitto D, Fox AM, Whittaker DM , Hopkinson M et al (2009) Cavity-enhanced polarization control and observation of off-resonant coupling in quantum dot nanocavities. CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.
Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ & Mowbray DJ (2009) Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures. IEEE J QUANTUM ELECT, 45(1-2), 79-85. View this article in WRRO
Patane A, Allison G, Eaves L, Kozlova NV, Zhuang QD, Krier A, Hopkinson M & Hill G (2008) Electron coherence length and mobility in highly mismatched III-N-V alloys. APPL PHYS LETT, 93(25).
Silva AG, Parra-Murillo CA, Valentim PT, Morais JSV, Plentz F, Guimaraes PSS, Vinck-Posada H, Rodriguez BA, Skolnick MS, Tahraoui A & Hopkinson M (2008) Quantum dot dipole orientation and excitation efficiency of micropillar modes. OPT EXPRESS, 16(23), 19201-19207.
Jin CY, Liu HY, Jiang Q, Hopkinson M & Wada O (2008) Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels. APPL PHYS LETT, 93(16).
Jang YD, Badcock TJ, Mowbray DJ, Skolnick MS, Park J, Lee D, Liu HY, Hopkinson M, Hogg RA & Andreev AD (2008) Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots. APPL PHYS LETT, 93(10).
Ulloa JM, Koenraad PM & Hopkinson M (2008) Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunneling microscopy. APPL PHYS LETT, 93(8).
Chia CK, Suryana M, Zhao W, Low HY & Hopkinson M (2008) Selective disordering of InAs/InGaAs dots-in-a-well structure patterned with sol-gel derived SiO2 strips imprinted by soft mold technique. APPL PHYS LETT, 93(7).
Makhonin MN, Tartakovskii AI, Ebbens A, Skolnick MS, Russell A, Fal'ko VI & Hopkinson M (2008) Nuclear spin pumping under resonant optical excitation in a quantum dot. APPL PHYS LETT, 93(7).
Boyle SJ, Ramsay AJ, Bello F, Liu HY, Hopkinson M, Fox AM & Skolnick MS (2008) Two-qubit conditional quantum-logic operation in a single self-assembled quantum dot. PHYS REV B, 78(7).
Thompson JDW, Neal JR, Shen TH, Morton SA, Tobin JG, Waddill GD, Matthew JAD, Greig D & Hopkinson M (2008) The evolution of Ga and As core levels in the formation of Fe/GaAs(001): A high resolution soft x-ray photoelectron spectroscopic study. J APPL PHYS, 104(2).
Spasov S, Allison G, Patane A, Eaves L, Tretyakov MY, Ignatov A, Hopkinson M & Hill G (2008) High field electron dynamics in dilute nitride Ga(AsN). APPL PHYS LETT, 93(2).
Smowton PM, George A, Sandall IC, Hopkinson M & Liu HY (2008) Origin of temperature-dependent threshold current in p-doped and undoped In(Ga)As quantum dot lasers (Invited paper). IEEE J SEL TOP QUANT, 14(4), 1162-1170.
Jang YD, Badcock TJ, Mowbray DJ, Skolnick MS, Park J, Lee D, Liu HY, Steer MJ & Hopkinson M (2008) Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer. APPL PHYS LETT, 92(25).
Ramsay AJ, Boyle SJ, Kolodka RS, Oliveira JBB, Skiba-Szymanska J, Liu HY, Hopkinson M, Fox AM & Skolnick MS (2008) Fast optical preparation, control, and readout of a single quantum dot spin.. Phys Rev Lett, 100(19), 197401. View this article in WRRO
Monte AFG, Qu FY & Hopkinson M (2008) Anomalous photocurrent self-assembled InAs/GaAs quantum dots. APPL PHYS LETT, 92(18).
Jin CY, Liu HY, Zhang SY & Hopkinson M (2008) Low-threshold 1.3-mu m GaInNAs quantum-well lasers using quaternary-barrier structures. IEEE PHOTONIC TECH L, 20(9-12), 942-944.
Stevens BJ, Childs DTD, Groom KM, Hopkinson M & Hogg RA (2008) A quantum dot swept laser source based upon a multisection laser device. JAPANESE JOURNAL OF APPLIED PHYSICS, 47(4), 2965-2967.
Allison G, Spasov S, Patane A, Eaves L, Kozlova NV, Freudenberger J, Hopkinson M & Hill G (2008) Electron effective mass and Si-donor binding energy in GaAs1-xNx probed by a high magnetic field. PHYS REV B, 77(12).
Makhonin MN, Tartakovskii AI, Van'kov AB, Drouzas I, Wright T, Skiba-Szymanska J, Russell A, Fal'ko VI, Skolnick MS, Liu HY & Hopkinson M (2008) Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots. PHYS REV B, 77(12).
Aivaliotis P, Zibik EA, Wilson LR, Cockburn JW, Hopkinson M & Vinh NQ (2008) Two photon absorption in quantum dot-in-a-well infrared photodetectors. APPL PHYS LETT, 92(2).
Jones BD, Astratov VN, Oulton R, Lam S, Sanvitto D, Whittaker DM, Fox AM, Skolnick MS, Fry PW & Hopkinson M (2008) Whispering gallery modes in quantum dot micropillar cavities. Optics InfoBase Conference Papers.
Boyle SJ, Ramsay AJ, Fox AM, Skolnick MS, Liu HY & Hopkinson M (2008) Controlled rotation (C-ROT) gate in a single self-assembled quantum dot. Optics InfoBase Conference Papers.
Lam S, Chalcraft ARA, Szymanski D, Oulton R, Jones BD, Sanvitto D, Whittaker DM, Fox AM, Skolnick MS, O'Brien D , Krauss TF et al (2008) Coupled resonant modes of dual L3-defect planar photonic crystal cavities. Optics InfoBase Conference Papers.
Ramsay AJ, Boyle SJ, Kolodka RS, Fox AM, Skolnick MS, Liu HY & Hopkinson M (2008) Fast optical preparation, control, and detection of a single hole spin in a quantum dot. Optics InfoBase Conference Papers.
Zhu TT, P'ng KMY, Hopkinson M, Bushby AJ & Dunstan DJ (2008) Mapping of the initial volume at the onset of plasticity in nanoindentation. Materials Research Society Symposium Proceedings, 1049, 85-91.
Breuer S, Drzewietzki L, Elsäßer W, Hopkinson M, Calligaro M & Krakowski M (2008) Comprehensive RF-domain spectral- and time-domain analysis of passively mode-locked two-section quantum-dot lasers emitting at 1.3 μm. Proceedings of SPIE - The International Society for Optical Engineering, 6997.
Haxha V, Garg R, Migliorato MA, Drouzas IW, Ulloa JM, Koenraad PM, Steer MJ, Liu HY, Hopkinson M & Mowbray DJ (2008) The use of Abel-Tersoff potentials in atomistic simulations of InGaAs Sb/GaAs. 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08, 111-112.
Herrera M, Ramasse Q, Browning ND, Pizarro J, Galindo PL, Gonzalez D, Garcia R, Du MW, Zhang SB & Hopkinson M (2008) High resolution HAADF-STEM imaging analysis of N related defects in GaNAs quantum wells. Microscopy and Microanalysis, 14(SUPPL. 2), 318-319.
Zibik EA, Grange T, Carpenter BA, Ferreira R, Bastard G, Vinh NQ, Phillips PJ, Steer MJ, Hopkinson M, Cockburn JW , Skolnick MS et al (2008) Intersublevel polaron dephasing in self-assembled quantum dots. PHYS REV B, 77(4).
Beanland R, Sanchez AM, Childs D, Groom KM, Liu HY, Mowbray DJ & Hopkinson M (2008) Structural analysis of life tested 1.3 mu m quantum dot. J APPL PHYS, 103(1).
Aivaliotis P, Menzel S, Zibik EA, Cockburn JW, Wilson LR & Hopkinson M (2007) Energy level structure and electron relaxation times in InAs/InxGa1-xAs quantum dot-in-a-well structures. APPL PHYS LETT, 91(25).
Oulton R, Jones BD, Lam S, Chalcraft ARA, Szymanski D, O'Brien D, Krauss TF, Sanvitto D, Fox AM, Whittaker DM , Hopkinson M et al (2007) Polarized quantum dot emission from photonic crystal nanocavities studied under moderesonant enhanced excitation.. Opt Express, 15(25), 17221-17230.
Alexander RR, Childs DTD, Agarwal H, Groom KM, Liu HY, Hopkinson M, Hogg RA, Ishida M, Yamarnoto T, Sugawara M , Arakawa Y et al (2007) Systematic study of the. effects of modulation p-doping on 1.3-mu m quantum-dot lasers. IEEE J QUANTUM ELECT, 43(11-12), 1129-1139.
Spasov S, Allison G, Patane A, Ignatov A, Eaves L, Maude DK, Hopkinson M & Airey R (2007) Magnetic field tuning of hot electron resonant capture in a semiconductor device. APPL PHYS LETT, 91(14).
Aivaliotis P, Zibik EA, Wilson LR, Cockburn JW, Hopkinson M & Airey RJ (2007) Tuning the photoresponse of quantum dot infrared photodetectors across the 8-12 mu m atmospheric window via rapid thermal annealing. APPL PHYS LETT, 91(14).
Aivaliotis P, Vukmirovic N, Zibik EA, Cockburn JW, Indjin D, Harrison P, Groves C, David JPR, Hopkinson M & Wilson LR (2007) Stark shift of the spectral response in quantum dots-in-a-well infrared photodetectors. J PHYS D APPL PHYS, 40(18), 5537-5540.
STEVENS BJ, CHILDS DTD, GROOM KM, HOPKINSON M & HOGG RA (2007) A Quantum Dot Swept Laser Source Based Upon a Multi Section Laser Device. Extended abstracts of the ... Conference on Solid State Devices and Materials, 2007, 1014-1015.
Stevens BJ, Childs DTD, Groom KM, Hopkinson M & Hogg RA (2007) All semiconductor swept laser source utilizing quantum dots. APPL PHYS LETT, 91(12).
Smowton PM, Sandall IC, Mowbray DJ, Liu HY & Hopkinson M (2007) Temperature-dependent gain and threshold in P-doped quantum dot lasers. IEEE J SEL TOP QUANT, 13(5), 1261-1266.
Ray SK, Choi TL, Groom KM, Stevens BJ, Liu HY, Hopkinson M & Hogg RA (2007) High-power and broadband quantum dot superluminescent diodes centered at 1250 nm for optical coherence tomography. IEEE J SEL TOP QUANT, 13(5), 1267-1272.
Zhang ZY, Luxmoore IJ, Jin CY, Liu HY, Jiang Q, Groom KM, Childs DT, Hopkinson M, Cullis AG & Hogg RA (2007) Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes. APPL PHYS LETT, 91(8).
Daraei A, Sanvitto D, Timpson JA, Fox AM, Whittaker DM, Skolnick MS, Guimaraes PSS, Vinck H, Tahraoui A, Fry PW , Liew SL et al (2007) Control of polarization and mode mapping of small volume high Q micropillars. J APPL PHYS, 102(4). View this article in WRRO
Astratov VN, Yang S, Lam S, Jones BD, Sanvitto D, Whittaker DM, Fox AM, Skolnick MS, Tahraoui A, Fry PW & Hopkinson M (2007) Whispering gallery resonances in semiconductor micropillars. APPL PHYS LETT, 91(7).
Grange T, Zibik EA, Ferreira R, Bastard G, Carpenter BA, Phillips PJ, Stehr D, Winnerl S, Helm M, Steer MJ , Hopkinson M et al (2007) Singlet and triplet polaron relaxation in doubly charged self-assembled quantum dots. NEW J PHYS, 9.
Herrera M, Ramasse QM, Browning ND, González D, Garcia R & Hopkinson M (2007) Z-contrast Imaging Analysis of Semiconductor Epitaxies: Application to GaNAs Quantum Wells and InAs/GaInAs/GaAs Dot in Well Structures. Microscopy and Microanalysis, 13(S02).
Jin CY, Liu HY, Groom KM, Jiang Q, Hopkinson M, Badcock TJ, Royce RJ & Mowbray DJ (2007) Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers. PHYS REV B, 76(8).
Tan LJJ, Ng JS, Tan CH, Hopkinson M & David JPR (2007) Effect of dead space on low-field avalanche multiplication in InP. IEEE T ELECTRON DEV, 54(8), 2051-2054.
Revin DG, Cockburn JW, Steer MJ, Airey RJ, Hopkinson M, Krysa AB, Wilson LR & Menzel S (2007) Improved performance of In0.6Ga0.4As/AlAs0.67Sb0.33/InP quantum cascade lasers by introduction of AlAs barriers in the active regions. APPL PHYS LETT, 91(5).
Jin CY, Liu HY, Zhang SY, Jiang Q, Liew SL, Hopkinson M, Badcock TJ, Nabavi E & Mowbray DJ (2007) Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer. APPL PHYS LETT, 91(2).
Ibanez J, Alarcon-Llado E, Cusco R, Artus L & Hopkinson M (2007) Optical phonon behavior in strain-free dilute Ga(As,N) studied by Raman scattering. J APPL PHYS, 102(1).
Ho YLD, Gibson R, Hu CY, Cryan MJ, Rarity JG, Heard PJ, Timpson JA, Fox AM, Skolnick MS, Hopkinson M & Tahraoui A (2007) Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials. J VAC SCI TECHNOL B, 25(4), 1197-1202.
Sandall IC, Smowton PM, Liu HY & Hopkinson M (2007) Nonradiative recombination in. multiple layer In(Ga)As quantum-dot lasers. IEEE J QUANTUM ELECT, 43(7-8), 698-703.
Chalcraft ARA, Lam S, O'Brien D, Krauss TF, Sahin M, Szymanski D, Sanvitto D, Oulton R, Skolnick MS, Fox AM , Whittaker DM et al (2007) Mode structure of the L3 photonic crystal cavity. APPL PHYS LETT, 90(24).
Liu HY, Badcock TJ, Jin CY, Nabavi E, Groom KM, Hopkinson M & Mowbray DJ (2007) Reduced temperature sensitivity of lasing wavelength in near-1.3 mu m InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer. ELECTRON LETT, 43(12), 670-672.
Ulloa JM, Drouzas IWD, Koenraad PM, Mowbray DJ, Steer MJ, Liu HY & Hopkinson M (2007) Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer. APPL PHYS LETT, 90(21).
Zhang ZY, Luxmoore IJ, Jiang Q, Liu HY, Groom KM, Childs DT, Hopkinson M, Cullis AG & Hogg RA (2007) Broadband quantum dot superluminescent LED with angled facet formed by focused ion beam etching. ELECTRON LETT, 43(10), 587-589.
Goh YL, Marshall ARJ, Massey DJ, Ng JS, Tan CH, Hopkinson M, David JPR, Jones SK, Button CC & Pinches SM (2007) Excess avalanche noise in In0.52Al0.48As. IEEE J QUANTUM ELECT, 43(5-6), 503-507.
Whittaker DM, Guimaraes PSS, Sanvitto D, Vinck H, Lam S, Daraei A, Timpson JA, Fox AM, Skolnick MS, Ho YLD , Rarity JG et al (2007) High Q modes in elliptical microcavity pillars. APPL PHYS LETT, 90(16).
Zibik EA, Ng WH, Wilson LR, Skolnick MS, Cockburn JW, Gutierrez M, Steer MJ & Hopkinson M (2007) Effects of alloy intermixing on the lateral confinement potential in InAs/GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy. APPL PHYS LETT, 90(16).
Allison G, Patane A, Endicott J, Eaves L, Mori N, Kozlova N, Freudenberger J, Miura N, Maude DK & Hopkinson M (2007) Probing the scattering potential of N-impurittes in GaAs by magneto-tunneling. INT J MOD PHYS B, 21(8-9), 1600-1604.
Revin DG, Cockburn JW, Steer MJ, Airey RJ, Hopkinson M, Krysa AB, Wilson LR & Menzel S (2007) InGaAs/AlAsSb/InP strain compensated quantum cascade lasers. APPL PHYS LETT, 90(15).
Mu X, Ding YJ & Hopkinson M (2007) Dynamics of carriers photogenerated in a dot-in-a-well nanostructure. LASER PHYS, 17(4), 305-309.
Ray SK, Liu HY, Choi TL, Groom KM, Liew SL, Hopkinson M & Hogg RA (2007) Molecular beam epitaxial growth of high power quantum dot super-luminecent diodes. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2418-2420.
Alexander RR, Childs D, Agarwal H, Groom KM, Liu HY, Hopkinson M & Hogg RA (2007) Zero and controllable linewidth enhancement factor in p-doped 1.3 mu m quantum dot lasers. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(4B), 2421-2423.
Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ & Adams AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs. J APPL PHYS, 101(6).
Badcock TJ, Royce RJ, Mowbray DJ, Skolnick MS, Liu HY, Hopkinson M, Groom KM & Jiang Q (2007) Low threshold current density and negative characteristic temperature 1.3 mu m InAs self-assembled quantum dot lasers. APPL PHYS LETT, 90(11).
Allison G, Spasov S, Patane A, Eaves L, Ignatov A, Maude DK, Hopkinson M & Airey R (2007) Magnetophonon oscillations in the negative differential conductance of dilute nitride GaAs1-xNx submicron diodes. PHYS REV B, 75(11).
Ramsay AJ, Kolodka RS, Bello F, Fry PW, Ng WK, Tahraoui A, Liu HY, Hopkinson M, Whittaker DM, Fox AM & Skolnick MS (2007) Coherent response of a quantum dot exciton driven by a rectangular spectrum optical pulse. PHYS REV B, 75(11).
Lau KS, Tozer RC, David JPR, Hopkinson M, Rees GJ, Carr M, Priestley N, Teoh YP & Dunn GM (2007) Double transit region Gunn diodes. SEMICOND SCI TECH, 22(3), 245-248.
Ng WH, Zibik EA, Soulby MR, Wilson LR, Cockburn JW, Liu HY, Steer MJ & Hopkinson M (2007) Broadband quantum cascade laser emitting from 7.7 to 8.4 mu m operating up to 340 K. J APPL PHYS, 101(4).
Zervos C, Frogley MD, Phillips CC, Kundys DO, Wilson LR, Hopkinson M & Skolnick MS (2007) All-optical switching in quantum cascade lasers. APPL PHYS LETT, 90(5).
Timpson JA, Sanvitto D, Daraei A, Guimaraes PSS, Vinck H, Lam S, Whittaker DM, Skolnick MS, Fox AM, Hu CY , Ho YLD et al (2007) Single photon sources based upon single quantum dots in semiconductor microcavity pillars. J MOD OPTIC, 54(2-3), 453-465.
Tartakovskii AI, Wright T, Russell A, Fal'ko VI, Van'kov AB, Skiba-Szymanska J, Drouzas I, Kolodka RS, Skolnick MS, Fry PW , Tahraoui A et al (2007) Nuclear spin switch in semiconductor quantum dots.. Phys Rev Lett, 98(2), 026806. View this article in WRRO
Revin DG, Cockburn JW, Steer MJ, Airey RJ, Hopkinson M, Krysa AB, Wilson LR & Menzel S (2007) InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 mu m. APPL PHYS LETT, 90(2).
Mu X, Ding YJ, Ooi BS & Hopkinson M (2007) Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well. Optics InfoBase Conference Papers.
Mu X, Ding YJ, Ooi BS & Hopkinson M (2007) Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well. Optics InfoBase Conference Papers.
Mu X, Ding YJ, Ooi BS & Hopkinson M (2007) Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well. Optics InfoBase Conference Papers.
Jin CY, Liu HY, Zhang SY, Airey R & Hopkinson M (2007) Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
Alexander RR, Childs D, Agarwal H, Groom KM, Liu HY, Hopkinson M, Hogg RA, Badcock TJ, Mowbray DJ, Skolnick MS , Ishida M et al (2007) Systematic study of the effects of δ-p-doping on 1.3μm dot-in-well lasers. Optics InfoBase Conference Papers.
Jin CY, Liu HY, Zhang SY, Airey R & Hopkinson M (2007) Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
Revin DG, Cockburn JW, Wilson LR, Steer MJ, Airey RJ, Hopkinson M & Krysa AB (2007) InGaAs-AlAsSb quantum cascade lasers: Towards 3 μm emission. Optics InfoBase Conference Papers.
Zibik EA, Menzel S, Aivaliotis P, Carpenter BA, Cockburn JW, Skolnick MS, Wilson LR, Grange T, Ferreira R, Bastard G , Stehr D et al (2007) Fast intraband capture and relaxation in InAs/GaAs self-assembled quantum dots. Optics InfoBase Conference Papers.
Jin CY, Liu HY, Groom KM, Hopkinson M, Badcock TJ, Royce RJ & Mowbray DJ (2007) Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
Chalcraft ARA, Lam S, Sahin M, Szymanski D, Sanvitto D, Oulton R, Skolnick MS, Fox AM, Whittaker DM, Tahraoui A , Liu HY et al (2007) Modes of the L3 defect cavity in InAs quantum dot photonic crystals. Optics InfoBase Conference Papers.
Jin CY, Liu HY, Zhang SY, Airey R & Hopkinson M (2007) Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Optics InfoBase Conference Papers.
Jin CY, Liu HY, Groom KM, Hopkinson M, Badcock TJ, Royce RJ & Mowbray DJ (2007) Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
Hu CY, Gibson R, Timpson JA, Lam S, Fox AM, Skolnick MS, Hopkinson M, Tahraoui A & Rarity JG (2007) CQED-enhanced single photon sources from InGaAs quantum dots. Optics InfoBase Conference Papers.
Jin CY, Liu HY, Groom KM, Hopkinson M, Badcock TJ, Royce RJ & Mowbray DJ (2007) Photon coupling mechanism in 1.3-μm quantum-dot lasers. Optics InfoBase Conference Papers.
Morozov D, Mauskopf P, Bacchus I, Elliott M, Dunscombe C, Hopkinson M & Henini M (2007) THz direct detector with 2D electron gas periodic structure absorber.. Proceedings of the Eighteenth International Symposium on Space Terahertz Technology 2007, ISSTT 2007, 123-127.
Mu X, Ding YJ, Ooi BS & Hopkinson M (2007) Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well. Conference on Lasers and Electro-Optics, 2007, CLEO 2007.
Merrick M, Cripps SA, Murdin BN, Hosea TJC, Veal TD, McConville CF & Hopkinson M (2007) Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity. Physical Review B - Condensed Matter and Materials Physics, 76(7).
Mu X, Ding YJ, Ooi BS & Hopkinson M (2007) Dynamics of exciton recombination in InAs Quantum Dots embedded in InGaAs/GaAs Quantum Well. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
Herrera M, González D, Hopkinson M, Liu HY & García R (2007) Kinetic considerations on the phase separation of GaInNAs quantum wells. Physica Status Solidi (C) Current Topics in Solid State Physics, 4(4), 1477-1480.
Astratov VN, Yang S, Lam S, Jones BD, Sanvitto D, Whittaker DM, Fox AM, Skolnick MS, Tahraoui A, Fry PW & Hopkinson M (2007) High-quality-factor WG modes in semiconductor microcavity pillars with circular and elliptical cross section. Proceedings of 2007 9th International Conference on Transparent Optical Networks, ICTON 2007, 4, 170-172.
Jin CY, Liu HY, Zhang SY, Airey R & Hopkinson M (2007) Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
Hu CY, Gibson R, Timpson JA, Lam S, Fox AM, Skolnick MS, Hopkinson M, Tahraoui A & Rarity JG (2007) CQED-enhanced single photon sources from InGaAs quantum dots. Conference on Lasers and Electro-Optics Europe - Technical Digest.
Zibik EA, Menzel S, Aivaliotis P, Carpenter BA, Cockburn JW, Skolnick MS, Wilson LR, Grange T, Ferreira R, Bastard G , Stehr D et al (2007) Fast intraband capture and relaxation in InAs/GaAs self-assembled quantum dots. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.
Naidu DS, Mexis M, Sobiesierski A, Smowton PM, Summers HD, Mowbray DJ, Liu HY & Hopkinson M (2007) Role of device structure on the performance of quantum dot lasers. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 435-436.
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Miguel-Sanchez J, Hopkinson M, Gutierrez M, Navaretti P, Liu HY, Guzman A, Ulloa JM, Hierro A & Munoz E (2004) Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy. J CRYST GROWTH, 270(1-2), 62-68.
Veal TD, Mahboob I, Piper LFJ, McConville CF & Hopkinson M (2004) Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1-x alloys. APPL PHYS LETT, 85(9), 1550-1552.
Liu HY, Sellers IR, Gutierrez M, Groom KM, Soong WM, Hopkinson M, David JPR, Beanland R, Badcock TJ, Mowbray DJ & Skolnick MS (2004) Influences of the spacer layer growth temperature on multilayer InAs/GaAs quantum dot structures. J APPL PHYS, 96(4), 1988-1992.
Veal TD, Mahboob I, Piper LFJ, Ashley T, Hopkinson M & McConville CF (2004) Electron spectroscopy of dilute nitrides. J PHYS-CONDENS MAT, 16(31), S3201-S3214.
Liu HY, Sellers IR, Badcock TJ, Mowbray DJ, Skolnick MS, Groom KM, Gutierrez M, Hopkinson M, Ng JS, David JPR & Beanland R (2004) Improved performance of 1.3 mu m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. APPL PHYS LETT, 85(5), 704-706.
Tartakovskii AI, Cahill J, Makhonin MN, Whittaker DM, Wells J-PR, Fox AM, Mowbray DJ, Skolnick MS, Groom KM, Steer MJ & Hopkinson M (2004) Dynamics of coherent and incoherent spin polarizations in ensembles of quantum dots.. Phys Rev Lett, 93(5), 057401.
Herrera M, Gonzalez D, Hopkinson M, Navaretti P, Gutierrez M, Liu HY & Garcia R (2004) Influence of growth temperature on the structural and optical quality of GaInNAs/GaAs multi-quantum wells. SEMICOND SCI TECH, 19(7), 813-818.
Veal TD, Mahboob I, Piper LFJ, McConville CF & Hopkinson M (2004) Fuchs-Kliewer phonon excitations in GaNAs alloys. J APPL PHYS, 95(12), 8466-8468.
Revin DG, Wilson LR, Carder DA, Cockburn JW, Steer MJ, Hopkinson M, Airey R, Garcia M, Sirtori C, Rouillard Y , Barate D et al (2004) Measurements of optical losses in mid-infrared semiconductor lasers using Fabry-Perot transmission oscillations. J APPL PHYS, 95(12), 7584-7587.
Tanguy Y, Muszalski J, Houlihan J, Huyet G, Pearce EJ, Smowton PM & Hopkinson M (2004) Mode formation in broad area quantum dot lasers at 1060 mn. OPT COMMUN, 235(4-6), 387-393.
Oulton R, Tartakovskii AI, Ebbens A, Cahill J, Finley JJ, Mowbray DJ, Skolnick MS & Hopkinson M (2004) Temperature-induced carrier escape processes studied in absorption of individual InxGa1-xAs quantum dots. PHYS REV B, 69(15).
Revin DG, Wilson LR, Zibik EA, Green RP, Cockburn JW, Steer MJ, Airey RJ & Hopkinson M (2004) lambda similar to 4-5.3 mu m intersubband emission from InGaAs-AlAsSb quantum cascade structures. APPL PHYS LETT, 84(9), 1447-1449.
Hernandez S, Cusco R, Ibanez J, Hopkinson M & Artus L (2004) Anomalous dispersion with excitation wavelength of longitudinal optical phonon-plasmon coupled modes in n-InGaAs. J PHYS-CONDENS MAT, 16(6), 971-978.
Ibanez J, Tarhan E, Ramdas AK, Hernandez S, Cusco R, Artus L, Melloch MR & Hopkinson M (2004) Direct observation of LO phonon-plasmon coupled modes in the infrared transmission spectra of n-GaAs and n-InxGa1-xAs epilayers. PHYS REV B, 69(7).
Summers HD, Matthews DR, Smowton PM, Rees P & Hopkinson M (2004) Laser dynamics in self-pulsating quantum dot systems. J APPL PHYS, 95(3), 1036-1041.
Wong HC, Dragas M, Ren GB, Rorison JM & Hopkinson M (2004) Temperature dependence of carrier dynamics in an inhomogeneous array of quantum dots. Proceedings of SPIE - The International Society for Optical Engineering, 5452, 33-40.
Tanguy Y, Muszalski J, Houlihan J, Huyet G, Pearce EJ, Smowton PM & Hopkinson M (2004) Mode structure of quantum dot semiconductor lasers. Proceedings of SPIE - The International Society for Optical Engineering, 5452, 518-525.
Endicott J, Ibáñez J, Patanè A, Eaves L, Bissiri M, Hopkinson M, Airey R, Hill G, Gollub D & Forchel A (2004) Probing the N-induced states in dilute GaAsN alloys by magneto-tunnelling. Physica E: Low-Dimensional Systems and Nanostructures, 21(2-4), 892-896.
Harris JL, Bryce AC, Kowalski OP, Marsh JH, Jouhti T, Pessa M & Hopkinson M (2004) Selective quantum well intermixing of 1.22 and 1.55μm GaInNAs laser material. OSA Trends in Optics and Photonics Series, 96 A, 625-626.
Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS & David JPR (2003) Improving optical properties of 1.55 mu m GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer. APPL PHYS LETT, 83(24), 4951-4953.
Sellers IR, Liu HY, Hopkinson M, Mowbray DJ & Skolnick MS (2003) 1.3 mu m lasers with AlInAs-capped self-assembled quantum dots. APPL PHYS LETT, 83(23), 4710-4712.
Oulton R, Finley JJ, Tartakovskii AI, Mowbray DJ, Skolnick MS, Hopkinson M, Vasanelli A, Ferreira R & Bastard G (2003) Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots. PHYS REV B, 68(23).
Liu HY, Sellers IR, Hopkinson M, Harrison CN, Mowbray DJ & Skolnick MS (2003) Engineering carrier confinement potentials in 1.3-mu m InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity. APPL PHYS LETT, 83(18), 3716-3718.
Luna E, Hopkinson M, Ulloa JM, Guzman A & Munoz E (2003) Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared. APPL PHYS LETT, 83(15), 3111-3113.
Lada M, Cullis AG, Parbrook PJ & Hopkinson M (2003) Metastable rocksalt phase in epitaxial GaN on sapphire. APPL PHYS LETT, 83(14), 2808-2810.
Zhang T, Shen TH, Greig D, Matthew JAD & Hopkinson M (2003) A ballistic electron emission microscopy study of ferromagnetic thin films embedded in Au/GaAs(100). J PHYS-CONDENS MAT, 15(38), 6485-6492.
Murray RT, Hill G, Hopkinson M & Parbrook PJ (2003) Crack initiation and termination in III-V epitaxial layers. PHILOS MAG, 83(27), 3077-3092.
Endicott J, Patane A, Ibanez J, Eaves L, Bissiri M, Hopkinson M, Airey R & Hill G (2003) Magnetotunneling spectroscopy of dilute Ga(AsN) quantum wells. PHYS REV LETT, 91(12).
Haywood SK, Lim ACH, Gupta R, Emery S, Hogg JHC, Hewer V, Stavrinou PN, Hopkinson M & Hill G (2003) Demonstration of a blueshift in type II asymmetric InP/InAsP/InGaAs multiple quantum wells. J APPL PHYS, 94(5), 3222-3228.
Chia CK, Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M, Airey RJ & Robson PN (2003) Multiplication and excess noise in AlxGa1-xAs/GaAs multilayer avalanche photodiodes. J APPL PHYS, 94(4), 2631-2637.
Jayaweera NB, Downes JR, Frogley MD, Hopkinson M, Bushby AJ, Kidd P, Kelly A & Dunstan DJ (2003) The onset of plasticity in nanoscale contact loading. P ROY SOC LOND A MAT, 459(2036), 2049-2068.
Tan CH, Ghin R, David JPR, Rees GJ & Hopkinson M (2003) The effect of dead space on gain and excess noise in In0.48Ga0.52P p(+)in(+) diodes. SEMICOND SCI TECH, 18(8), 803-806.
Adawi AM, Zibik EA, Wilson LR, Lemaitre A, Cockburn JW, Skolnick MS, Hopkinson M & Hill G (2003) Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots. APPL PHYS LETT, 83(4), 602-604.
Bristow AD, Whittaker DM, Astratov VN, Skolnick MS, Tahraoui A, Krauss TF, Hopkinson M, Croucher MP & Gehring GA (2003) Defect states and commensurability in dual-period AlxGa1-xAs photonic crystal waveguides. PHYS REV B, 68(3).
Jacobs SEJ, Kemerink M, Koenraad PM, Hopkinson M, Salemink HWM & Wolter JH (2003) Spatially resolved scanning tunneling luminescence on self-assembled InGaAs/GaAs quantum dots. APPL PHYS LETT, 83(2), 290-292.
Bruls DM, Koenraad PM, Salemink HWM, Wolter JH, Hopkinson M & Skolnick MS (2003) Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy. APPL PHYS LETT, 82(21), 3758-3760.
Liu HY & Hopkinson M (2003) Tuning the structural and optical properties of 1.3-mu m InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer. APPL PHYS LETT, 82(21), 3644-3646.
Carder DA, Wilson LR, Green RP, Cockburn JW, Hopkinson M, Steer MJ, Airey R & Hill G (2003) Room-temperature operation of an InAs-GaAs-AlAs quantum-cascade laser. APPL PHYS LETT, 82(20), 3409-3411.
Adawi AM, Zibik EA, Wilson LR, Lemaitre A, Cockburn JW, Skolnick MS, Hopkinson M, Hill G, Liew SL & Cullis AG (2003) Strong in-plane polarized intraband absorption in vertically aligned InGaAs/GaAs quantum dots. APPL PHYS LETT, 82(20), 3415-3417.
Bollet F, Gillin WP, Hopkinson M & Gwilliam R (2003) On the diffusion of lattice matched InGaAs/InP microstructures. J APPL PHYS, 93(7), 3881-3885.
Monte AFG, Finley JJ, Ashmore AD, Fox AM, Mowbray DJ, Skolnick MS & Hopkinson M (2003) Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers. J APPL PHYS, 93(6), 3524-3528.
Liu HY, Hopkinson M, Harrison CN, Steer MJ, Frith R, Sellers IR, Mowbray DJ & Skolnick MS (2003) Optimizing the growth of 1.3 mu m InAs/InGaAs dots-in-a-well structure. J APPL PHYS, 93(5), 2931-2936.
Pearce EJ, Smowton PM, Summers HD & Hopkinson M (2003) A comparison of the overall radiative efficiency of DWELL, standard QD and QW laser structures. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1, 120-121.
Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. Institute of Physics Conference Series, 174, 263-266.
Matthews DR, Summers HD, Smowton PM & Hopkinson M (2002) Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers. APPL PHYS LETT, 81(26), 4904-4906.
Harrison CN, David JPR, Hopkinson M & Rees GJ (2002) Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes. J APPL PHYS, 92(12), 7684-7686.
Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M & Airey RJ (2002) Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9). IEEE T ELECTRON DEV, 49(12), 2349-2351. View this article in WRRO
Tartakovskii AI, Groom KM, Adawi AM, Lemaitre A, Fox AM, Mowbray DJ, Skolnick MS & Hopkinson M (2002) Dynamics of stimulated emission in InAs quantum-dot laser structures measured in pump-probe experiments. APPL PHYS LETT, 81(22), 4118-4120.
Green RP, Wilson LR, Carder DA, Cockburn JW, Hopkinson M, Steer MJ, Airey RJ & Hill G (2002) Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding. ELECTRON LETT, 38(24), 1539-1541.
Smowton PM, Pearce EJ, Schneider HC, Chow WW & Hopkinson M (2002) Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers. APPL PHYS LETT, 81(17), 3251-3253.
Finley JJ, Mowbray DJ, Skolnick MS, Ashmore AD, Baker C, Monte AFG & Hopkinson M (2002) Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots. PHYS REV B, 66(15).
Bruls DM, Vugs JWAM, Koenraad PM, Salemink HWM, Wolter JH, Hopkinson M, Skolnick MS, Long F & Gill SPA (2002) Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy. APPL PHYS LETT, 81(9), 1708-1710.
Wilson LR, Carder DA, Cockburn JW, Green RP, Revin DG, Steer MJ, Hopkinson M, Hill G & Airey R (2002) Intervalley scattering in GaAs-AlAs quantum cascade lasers. APPL PHYS LETT, 81(8), 1378-1380.
Cullis AG, Norris DJ, Walther T, Migliorato MA & Hopkinson M (2002) Stranski-Krastanow transition and epitaxial island growth. PHYS REV B, 66(8).
Groom KM, Tartakovskii AI, Mowbray DJ, Skolnick MS, Smowton PM, Hopkinson M & Hill G (2002) Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement. APPL PHYS LETT, 81(1), 1-3.
Bruls DM, Koenraad PM, Hopkinson M, Wolter JH & Salemink HWM (2002) Determination of the outward relaxation of cleaved strained InAs structures by scanning tunneling microscopy. Applied Surface Science, 190(1-4), 258-263.
Ng BK, David JPR, Tozer RC, Hopkinson M, Hill G & Rees GJ (2002) Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes. IEEE PHOTONIC TECH L, 14(4), 522-524. View this article in WRRO
Gutierrez M, Gonzalez D, Aragon G, Garcia R, Hopkinson M, Sanchez JJ & Izpura I (2002) Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates. APPL PHYS LETT, 80(9), 1541-1543.
Steer MJ, Carder DA, Wilson LR, Cockburn JW, Hopkinson M, Chia CK, Airey R & Hill G (2002) GaAs-based quantum cascade lasers with native oxide-defined current confinement. ELECTRON LETT, 38(2), 75-77.
Cusco R, Artus L, Hernandez S, Ibanez J & Hopkinson M (2002) Raman scattering by LO phonon-plasmon coupled modes in n-type In0.53Ga0.47As. PHYS REV B, 65(3).
Matthews DR, Summers HD, Smowton PM & Hopkinson M (2002) Differential-gain damping in quantum dot lasers due to wetting layer states. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1, 23-24.
Matthews DR, Summers HD, Smowton PM & Hopkinson M (2002) Self-sustained Q-switching in InGaAs quantum dot lasers. Conference Digest - IEEE International Semiconductor Laser Conference, 75-76.
Migliorato MA, Wilson LR, Mowbray DJ, Skolnick MS, Al-Khafaji M, Cullis AG & Hopkinson M (2001) Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots. J APPL PHYS, 90(12), 6374-6378.
Thomson JD, Summers HD, Smowton PM, Herrmann E, Blood P & Hopkinson M (2001) Temperature dependence of the lasing wavelength of InGaAs quantum dot lasers. J APPL PHYS, 90(9), 4859-4861.
Wilson LR, Cockburn JW, Carder DA, Steer MJ, Hopkinson M, Chia CK, Airey R & Hill G (2001) lambda=8.3 mu m GaAs/AlAs quantum cascade lasers incorporating InAs monolayers. ELECTRON LETT, 37(21), 1292-1293.
Herrmann E, Smowton PM, Ning Y, Groom KM, Mowbray DJ & Hopkinson M (2001) Performance of lasers containing three, five and seven layers of quantum dots. IEE P-OPTOELECTRON, 148(5-6), 238-242.
Ng BK, David JPR, Plimmer SA, Tozer RC, Rees GJ & Hopkinson M (2001) Al0.8Ga0.2As: A very low excess noise multiplication medium for avalanche photodiodes. IEE P-OPTOELECTRON, 148(5-6), 243-246.
Ng BK, David JPR, Plimmer SA, Rees GJ, Tozer RC, Hopkinson M & Hill G (2001) Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE T ELECTRON DEV, 48(10), 2198-2204. View this article in WRRO
Groom KM, Wilson LR, Mowbray DJ, Skolnick MS, Hill G, Steer MJ & Hopkinson M (2001) Electrically pumped InGaAs quantum dot ring and cylindrical cavity lasers. ELECTRON LETT, 37(20), 1220-1222.
Moran M, Meidia H, Fleischmann T, Norris DJ, Rees GJ, Cullis AG & Hopkinson M (2001) Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy. J PHYS D APPL PHYS, 34(13), 1943-1946.
Wolfl F, Ryan JF, Fox AM, Ashmore AD, Mowbray DJ, Skolnick MS, Hopkinson M & Hill G (2001) Intensity noise in quantum-dot laser diodes. APPL PHYS LETT, 78(23), 3577-3579.
Fleischmann T, Moran M, Hopkinson M, Meidia H, Rees GJ, Cullis AG, Sanchez-Rojas JL & Izpura I (2001) Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition. J APPL PHYS, 89(9), 4689-4696.
Smowton PM, Herrmann E, Ning Y, Summers HD, Blood P & Hopkinson M (2001) Optical mode loss and gain of multiple-layer quantum-dot lasers. APPL PHYS LETT, 78(18), 2629-2631.
Lemaitre A, Ashmore AD, Finley JJ, Mowbray DJ, Skolnick MS, Hopkinson M & Krauss TF (2001) Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots. PHYS REV B, 63(16).
Finley JJ, Fry PW, Ashmore AD, Lemaitre A, Tartakovskii AI, Oulton R, Mowbray DJ, Skolnick MS, Hopkinson M, Buckle PD & Maksym PA (2001) Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot. PHYS REV B, 63(16).
Bruls DM, Vugs JWAM, Koenraad PM, Skolnick MS, Hopkinson M & Wolter JH (2001) Cracking self-assembled InAs quantum dots. APPL PHYS A-MATER, 72, S205-S207.
Walther T, Cullis AG, Norris DJ & Hopkinson M (2001) Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs.. Phys Rev Lett, 86(11), 2381-2384.
Summers HD, Thomson JD, Smowton PM, Blood P & Hopkinson M (2001) Thermodynamic balance in quantum dot lasers. SEMICOND SCI TECH, 16(3), 140-143.
Groom KM, Ashmore AD, Mowbray DJ, Skolnick MS, Hopkinson M, Hill G, Clark J & Smowton PM (2001) Optical spectroscopic study of carrier processes in self-assembled In(Ga)As-Ga(Al)As quantum dot lasers. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 224(1), 123-127.
Chen X, Dawson P, Godfrey MJ & Hopkinson M (2001) Temperature Dependent Optical Properties of InAs/AlGaAs Quantum Dots. physica status solidi (b), 224(1), 107-110.
Finley JJ, Ashmore AD, Lemaitre A, Mowbray DJ, Skolnick MS, Itskevich IE, Maksym PA, Hopkinson M & Krauss TF (2001) Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots. PHYS REV B, 6307(7).
Wilson LR, Cockburn JW, Steer MJ, Carder DA, Skolnick MS, Hopkinson M & Hill G (2001) Decreasing the emission wavelength of GaAs-AlGaAs quantum cascade lasers by the incorporation of ultrathin InGaAs layers. APPL PHYS LETT, 78(4), 413-415.
Walther T, Cullis AG, Norris DJ & Hopkinson M (2001) The nature of islanding in the InGaAs/GaAs epitaxial system. Materials Research Society Symposium - Proceedings, 648, P1261-P1266.
Stallard WG, Plaut AS, Thoms S, Holland MC, Beaumont SP, Stanley CR & Hopkinson M (2001) Fermi-edge singularities in a one-dimensional electron system in magnetic field. SOLID STATE COMMUN, 119(1), 55-58.
Fry PW, Finley JJ, Wilson LR, Lemaitre A, Mowbray DJ, Skolnick MS, Hopkinson M, Hill G & Clark JC (2000) Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots. APPL PHYS LETT, 77(26), 4344-4346.
Ng BK, David JPR, Plimmer SA, Hopkinson M, Tozer RC & Rees GJ (2000) Impact ionization coefficients of Al0.8Ga0.2As. APPL PHYS LETT, 77(26), 4374-4376.
Fry PW, Itskevich IE, Parnell SR, Finley JJ, Wilson LR, Schumacher KL, Mowbray DJ, Skolnick MS, Al-Khafaji M, Cullis AG , Hopkinson M et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYS REV B, 62(24), 16784-16791.
Summers HD, Thomson JD, Smowton PM, Herrmann E, Blood P & Hopkinson M (2000) Thermodynamic relation between optical emission and absorption processes in quantum dot lasers. Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088).
Thomson JD, Herrmann E, Summers HD, Smowton PM & Hopkinson M (2000) Temperature insensitive quantum dot structures for vertical cavity lasers. Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088).
Herrmann E, Smowton PM, Summers HD, Thomson JD & Hopkinson M (2000) Modal gain and internal optical mode loss of a quantum dot laser. APPL PHYS LETT, 77(2), 163-165.
Murray RT, Kiely CJ & Hopkinson M (2000) General characteristics of crack arrays in epilayers grown under tensile strain. SEMICOND SCI TECH, 15(4), 325-330.
Keightley PT, Wilson LR, Cockburn JW, Skolnick MS, Clark JC, Grey R, Hill G & Hopkinson M (2000) Improved performance from GaAs-AlGaAs quantum cascade lasers with enhanced upper laser level confinement. PHYSICA E, 7(1-2), 8-11.
Skolnick MS, Itskevich IE, Fry PW, Mowbray DJ, Wilson LR, Barker JA, O'Reilly EP, Trojan IA, Lyapin SG, Hopkinson M , Al-Khafaji M et al (2000) Electronic structure of InAs-GaAs self-assembled quantum dots studied by perturbation spectroscopy. PHYSICA E, 6(1-4), 348-357.
Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Finley JJ, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA , Hopkinson M et al (2000) Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots.. Phys Rev Lett, 84(4), 733-736.
Wolfi F, Ryan JF, Fox AM, Ashmore AD, Mowbray DJ, Skolnick MS, Hopkinson M & Hill G (2000) Intermode correlations in a quantum dot laser as a measure of inter-dot entanglement. Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088).
Wilson LR, Keightley PT, Cockburn JW, Skolnick MS, Clark JC, Grey R, Hill G & Hopkinson M (2000) GaAs-AlGaAs and InGaAs-InAlAs quantum cascade lasers. Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 267.
Fry PW, Harris L, Parnell SR, Finley JJ, Ashmore AD, Mowbray DJ, Skolnick MS, Hopkinson M, Hill G & Clark JC (2000) Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers. J APPL PHYS, 87(1), 615-617.
Harris L, Ashmore AD, Mowbray DJ, Skolnick MS, Hopkinson M, Hill G & Clark J (1999) Gain characteristics of InAs/GaAs self-organized quantum-dot lasers. APPL PHYS LETT, 75(22), 3512-3514.
Wilson LR, Keightley PT, Cockburn JW, Skolnick MS, Clark JC, Hill G, Grey R & Hopkinson M (1999) Comparison of performance of GaAs-AlGaAs and InGaAs-AlInAs quantum cascade lasers. ELECTRON LETT, 35(23), 2034-2036.
Sanchez JJ, Tijero JMG, Izpura I, Sanchez-Rojas JL, Hopkinson M, Gutierrez M, Gonzalez D, Aragon G & Garcia R (1999) Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (001) and (111)B GaAs for long wavelength applications. J CRYST GROWTH, 206(4), 287-293.
Buckle PD, Dawson P, Hall SA, Chen X, Steer MJ, Mowbray DJ, Skolnick MS & Hopkinson M (1999) Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots. J APPL PHYS, 86(5), 2555-2561.
Itskevich IE, Skolnick MS, Mowbray DJ, Trojan IA, Lyapin SG, Wilson LR, Steer MJ, Hopkinson M, Eaves L & Main PC (1999) Excited states and selection rules in self-assembled InAs/GaAs quantum dots. PHYS REV B, 60(4), R2185-R2188.
Ghin R, David JPR, Plimmer SA, Hopkinson M, Rees GJ, Herbert DC & Wight DR (1998) Avalanche multiplication and breakdown in Ga0.52In0.48P diodes. IEEE T ELECTRON DEV, 45(10), 2096-2101.
Sanchez JJ, Marty O, Hopkinson M, Izpura I, Guzman A & Tijero JMG (1998) Structural and morphological characteristics of InGaAs/GaAs quantum well structures on tilted (1 1 1)B GaAs grown by MBE. J CRYST GROWTH, 192(3-4), 363-371.
Harris L, Mowbray DJ, Skolnick MS, Hopkinson M & Hill G (1998) Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers. APPL PHYS LETT, 73(7), 969-971.
Krier A, Chubb D & Hopkinson M (1998) 2.7 mu m LEDs for water vapour detection grown by MBE on InP. ELECTRON LETT, 34(16), 1606-1607.
Parbrook PJ, Ozanyan KB, Hopkinson M, Whitehouse CR, Sobiesierski Z & Westwood DI (1998) Optical monitoring of InP monolayer growth rates. APPL PHYS LETT, 73(3), 345-347.
Vodopyanov KL, O'Neill K, Serapiglia GB, Phillips CC, Hopkinson M, Vurgaftman I & Meyer JR (1998) Phase-matched second harmonic generation in asymmetric double quantum wells. APPL PHYS LETT, 72(21), 2654-2656.
Li YB, Cockburn JW, Skolnick MS, Duck JP, Birkett MJ, Larkin IA, Grey R, Hill G & Hopkinson M (1998) Mid-infrared intersubband electroluminescence from a single-period GaAs/AlGaAs triple barrier structure. APPL PHYS LETT, 72(17), 2141-2143.
Li YB, Cockburn JW, Duck JP, Birkett MJ, Skolnick MS, Larkin IA, Hopkinson M, Grey R & Hill G (1998) Photoluminescence spectroscopy of intersubband population inversion in a GaAs/AlxGa1-xAs triple-barrier tunneling structure. PHYS REV B, 57(11), 6290-6293.
Dorr U, Schwarz W, Worner A, Westphaling R, Dinger A, Kalt H, Mowbray DJ, Hopkinson M & Langbein W (1998) Optical properties of (AlxGa1-x)(0.52)In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor. J APPL PHYS, 83(4), 2241-2249.
Mottahedeh R, Haywood SK, Woodbridge K, Hopkinson M, Hill G & Rivers A (1998) 1.3 mu m InAsP quantum well lasers grown by solid source MBE. IEE P-OPTOELECTRON, 145(1), 3-6.
Wilson LR, Mowbray DJ, Skolnick MS, Morifuji M, Steer MJ, Larkin IA & Hopkinson M (1998) Magneto-optical studies of self-organized InAs/GaAs quantum dots. PHYS REV B, 57(4), R2073-R2076.
Stallard WG, Plaut AS, Thoms S, Holland MC, Beaumont SP, Stanley CR & Hopkinson M (1998) Strain-induced quantum confinement of electron gases: The observation of quantum dot levels. Applied Physics Letters, 73(13), 1898-1900.
Roberts JM, Harris JJ, Woods NJ & Hopkinson M (1998) Investigation of dalta-doped quantum wells for power FET applications. Superlattices and Microstructures, 23(2).
Mottahedeh R, Prescott D, Haywood SK, Pattison DA, Kean PN, Bennion I, Hopkinson M, Pate M & Hart L (1998) Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple quantum well. J APPL PHYS, 83(1), 306-309.
Johal TK, Barrett SD, Hopkinson M, Weightman P & Power JR (1998) Reflectance anisotropy spectroscopy study of the surface reconstructions of decapped InP(001). J APPL PHYS, 83(1), 480-485.
Roberts JM, Harris JJ, Woods NJ & Hopkinson M (1998) Investigation of delta-doped quantum wells for power FET applications. SUPERLATTICE MICROST, 23(2), 187-190.
Ozanyan KB, Parbrook PJ, Hopkinson M, Whitehouse CR, Sobiesierski Z & Westwood DI (1997) In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. J APPL PHYS, 82(1), 474-476.
Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ & Robson PN (1997) Impact ionization coefficients in GaInP p-i-n diodes. APPL PHYS LETT, 70(26), 3567-3569.
Brenchley ME, Hopkinson M, Kelly A, Kidd P & Dunstan DJ (1997) Coherency strain as an athermal strengthening mechanism. PHYS REV LETT, 78(20), 3912-3914.
Sobiesierski Z, Westwood DI, Parbrook PJ, Ozanyan KB, Hopkinson M & Whitehouse CR (1997) As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. APPL PHYS LETT, 70(11), 1423-1425.
David JPR, Ghin R, Plimmer SA, Hopkinson M & Allam J (1997) Breakdown characteristics of (AlxGa1-x)0.52In0.48P p-i-n diodes. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 256-260.
Martin RW, McGow FJ, Hopkinson M & David JPR (1997) Investigation of band non-parabolicities in strain-balanced GaInAs/GaAlInAs coupled quantum wells. SUPERLATTICE MICROST, 22(4), 517-520.
Steer MJ, Mowbray DJ, Tribe WR, Skolnick MS, Sturge MD, Hopkinson M, Cullis AG, Whitehouse CR & Murray R (1996) Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots.. Phys Rev B Condens Matter, 54(24), 17738-17744.
Murray RT, Kiely CJ & Hopkinson M (1996) Crack formation in III-V epilayers grown under tensile strain on InP(001) substrates. PHILOS MAG A, 74(2), 383-393.
Barnham K, Connolly J, Griffin P, Haarpaintner G, Nelson J, Tsui E, Zachariou A, Osborne J, Button C, Hill G , Hopkinson M et al (1996) Voltage enhancement in quantum well solar cells. J APPL PHYS, 80(2), 1201-1206.
Kowalski OP, Wegerer RM, Mowbray DJ, Skolnick MS, Button CC, Roberts JS, Hopkinson M, David JPR & Hill G (1996) Optical spectroscopic observation of spontaneous long range ordering in AlGaInP. APPL PHYS LETT, 68(23), 3266-3268.
Greally MG, Hayne M, Usher A, Hill G & Hopkinson M (1996) Low-temperature mobility of two-dimensional electrons in (Ga,In)As-(Al,In)As heterojunctions. J APPL PHYS, 79(11), 8465-8469.
Roberts JM, Harris JJ, Hart L, Hopkinson M & Roberts C (1996) Mobility and saturation drift velocity enhancement in highly doped GaAs and InxGa1-xAs structures designed for use in power FET devices. ELECTRON LETT, 32(5), 494-496.
Vickers AJ, Hassan MA, Mashakekhi HR, Griguoli A & Hopkinson M (1996) Study of a backgated metal-semiconductor-metal photodetector. APPL PHYS LETT, 68(6), 815-817.
Kinder D, Nicholas RJ, Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G (1996) Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields. SEMICOND SCI TECH, 11(1), 34-38.
Hitchens LJ, Houston PA, Hopkinson M & Rees GJ (1995) Enhanced mobility piezoelectric AlInAs/InGaAs quantum well structures on (111)B InP substrates. ELECTRON LETT, 31(25), 2215-2216.
Hopkinson M, David JPR, Khoo EA, Pabla AS, Woodhead J & Rees GJ (1995) InxGa1-xAs/InP quantum well structures grown on [111]B InP. MICROELECTR J, 26(8), 805-810.
Peggs DW, Skolnick MS, Whittaker DM, Hogg RA, Willcox AR, Mowbray DJ, Grey R, Rees GJ, Hart L, Hopkinson M , Hill G et al (1995) Observation of Wannier-Stark ladder transitions in InxGa1-xAs-GaAs piezoelectric superlattices.. Phys Rev B Condens Matter, 52(20), 14340-14343.
GUY P, WOODBRIDGE K, HAYWOOD SK & HOPKINSON M (1995) A COMPARISON OF 1.55 MU-M DISTRIBUTED-BRAGG-REFLECTOR STACKS FOR USE IN MULTIQUANTUM-WELL MICRO-RESONATOR MODULATORS. SEMICOND SCI TECH, 10(9), 1283-1286.
DAVID JPR, HOPKINSON M, STAVRINOU PN & HAYWOOD SK (1995) GROWTH OF INASXP1-X/INP MULTIQUANTUM-WELL STRUCTURES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. J APPL PHYS, 78(5), 3330-3334.
TIMOFEEV FN, SEEDS AJ, BAYVEL P, MIDWINTER JE & HOPKINSON M (1995) APPLICATION OF ANODIC-OXIDATION FOR POSTGROWTH TAILORING OF INGAASP/INP ASYMMETRIC FABRY-PEROT MODULATOR REFLECTION SPECTRA. ELECTRON LETT, 31(14), 1186-1187.
DELONG MC, MOWBRAY DJ, HOGG RA, SKOLNICK MS, WILLIAMS JE, MEEHAN K, KURTZ SR, OLSON JM, SCHNEIDER RP, WU MC & HOPKINSON M (1995) BAND-GAP OF COMPLETELY DISORDERED GA0.52IN0.48P. APPL PHYS LETT, 66(23), 3185-3187.
YOW HK, HOUSTON PA & HOPKINSON M (1995) CONDUCTION-BAND DISCONTINUITIES IN GA0.5IN0.5P-ALXGA0.5-XIN0.5P HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION. APPL PHYS LETT, 66(21), 2852-2854.
CERNIANSKY M, ALLSOPP DWE & HOPKINSON M (1995) DELTA-DOPING-ENHANCED INGAAS/INALAS HETEROBARRIER DIODES. ELECTRON LETT, 31(6), 493-494.
KOWALSKI OP, COCKBURN JW, MOWBRAY DJ, SKOLNICK MS, TEISSIER R & HOPKINSON M (1995) GALNP-ALGALNP BAND OFFSETS DETERMINED FROM HYDROSTATIC-PRESSURE MEASUREMENTS. APPL PHYS LETT, 66(5), 619-621.
Hopkinson M, David JPR, Khoo EA, Pabla AS, Woodhead J & Rees GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 299-302.
Dawson MD, Najda SP, Kean AH, Duggan G, Mowbray DJ, Kowalski OP, Skolnick MS & Hopkinson M (1994) Measurement of the direct energy gap of Al0.5In0.5P: Implications for the band discontinuity at Ga1-xInxP/AlyIn1-yP heterojunctions.. Phys Rev B Condens Matter, 50(15), 11190-11191.
PABLA AS, HOPKINSON M, DAVID JPR, KHOO EA & REES GJ (1994) ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS/INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M. ELECTRON LETT, 30(20), 1707-1708.
GUY P, WOODBRIDGE K, HAYWOOD SK & HOPKINSON M (1994) HIGHLY DOPED 1.55-MU-M GAXIN1-XAS/INP DISTRIBUTED-BRAGG-REFLECTOR STACKS. ELECTRON LETT, 30(18), 1526-1527.
MOWBRAY DJ, KOWALSKI OP, HOPKINSON M, SKOLNICK MS & DAVID JPR (1994) ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 65(2), 213-215.
DAVID JPR, HOPKINSON M & PATE MA (1994) AVALANCHE BREAKDOWN IN (AL(X)GA(1X))0.52IN0.48P PIN JUNCTIONS. ELECTRON LETT, 30(11), 907-909.
HOUSTON PA, YANG YF, JOHNSON MR & HOPKINSON M (1994) MAGNETIC-FIELD EFFECTS ON INP INGAAS QUASI-BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTORS. SEMICOND SCI TECH, 9(5), 1153-1155.
MOWBRAY DJ, KOWALSKI OP, SKOLNICK MS, DELONG MC, HOPKINSON M, DAVID JPR & CULLIS AG (1994) SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS. J APPL PHYS, 75(4), 2029-2034.
David JPR, Hopkinson M, Ghin R & Pate MA (1994) Reverse breakdown characteristics in InGa(Al)P/InGaP p-i-n junctions. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 403-406.
MOWBRAY DJ, KOWALSKI OP, SKOLNICK MS, HOPKINSON M & DAVID JPR (1994) OPTICAL SPECTROSCOPY OF ALGAINP BASED WIDE-BAND GAP QUANTUM-WELLS. SUPERLATTICE MICROST, 15(3), 313-316.
GUY P, WOODBRIDGE K & HOPKINSON M (1993) HIGH REFLECTIVITY AND LOW-RESISTANCE 1.55-MU-M AL0.65IN0.35AS/GA0.63IN0.37AS STRAINED QUARTER-WAVE BRAGG REFLECTOR STACK. ELECTRON LETT, 29(22), 1947-1948.
EHRLICH JE, NEILSON DT, WALKER AC & HOPKINSON M (1993) GUIDED-WAVE MEASUREMENTS OF REAL-EXCITATION OPTICAL NONLINEARITIES IN A TENSILE-STRAINED INGAAS ON INP QUANTUM-WELL AT 1.5 MU-M. OPT COMMUN, 102(5-6), 473-477.
EHRLICH JE, NEILSON DT, WALKER AC, KENNEDY GT, GRANT RS, SIBBETT W, HOPKINSON M & PATE M (1993) OPTICAL BISTABILITY IN AN INGAAS/INP MULTIPLE-QUANTUM-WELL WAVE-GUIDE FABRY-PEROT CAVITY. APPL PHYS LETT, 63(12), 1610-1612.
BISHOP PJ, DANIELS ME, RIDLEY BK & HOPKINSON M (1993) TRANSIENT PHOTOLUMINESCENCE IN GAINAS/INP MULTIPLE-QUANTUM WELLS. SEMICOND SCI TECH, 8(9), 1758-1763.
NEILSON DT, EHRLICH JE, MEREDITH P, WALKER AC, KENNEDY GT, GRANT RS, ROBERTS PD, SIBBETT W, HOPKINSON M & PATE M (1993) SUBMILLIWATT OPTICAL BISTABILITY IN A COATED INGAAS/INP MULTIQUANTUM-WELL WAVE-GUIDE FABRY-PEROT CAVITY. ELECTRON LETT, 29(17), 1537-1539.
DELONG MC, MOWBRAY DJ, HOGG RA, SKOLNICK MS, HOPKINSON M, DAVID JPR, TAYLOR PC, KURTZ SR & OLSON JM (1993) PHOTOLUMINESCENCE, PHOTOLUMINESCENCE EXCITATION, AND RESONANT RAMAN-SPECTROSCOPY OF DISORDERED AND ORDERED GA0.52IN0.48P. J APPL PHYS, 73(10), 5163-5172.
WANG JN, STEEDS JW & HOPKINSON M (1993) MICROSTRUCTURE AND CATHODOLUMINESCENCE OF MBE-GROWN (001) INXGA1-XP/GAAS STRAINED-LAYER HETEROSTRUCTURES. SEMICOND SCI TECH, 8(4), 502-508.
EHRLICH JE, NEILSON DT, WALKER AC, KENNEDY GT, GRANT RS, SIBBETT W & HOPKINSON M (1993) CARRIER LIFETIMES IN MBE AND MOCVD INGAAS QUANTUM-WELLS. SEMICOND SCI TECH, 8(2), 307-309.
Loh WH, Atkinson D, Morkel PR, Hopkinson M, Rivers A, Seeds AJ & Payne DN (1993) All‐solid‐state subpicosecond passively mode locked erbium‐doped fiber laser. Applied Physics Letters, 63(1), 4-6.
David JPR, Hopkinson M, Hill G, Stavrinou P & Haywood SK (1993) Growth and characterisation of InAsP/InP SQW and MQW PIN diode structures. 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, 167-170.
LOH WH, ATKINSON D, MORKEL PR, HOPKINSON M, RIVERS A, SEEDS AJ & PAYNE DN (1993) PASSIVELY MODE-LOCKED ER3+ FIBER LASER USING A SEMICONDUCTOR NONLINEAR MIRROR. IEEE PHOTONIC TECH L, 5(1), 35-37.
LEE TW, HOUSTON PA, KUMAR R, HILL G & HOPKINSON M (1992) ASYMMETRIC CHARACTERISTICS OF INGAP/GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. SEMICOND SCI TECH, 7(3), 425-428.
HOPKINSON M, DAVID JPR, CLAXTON PA & KIGHTLEY P (1992) GROWTH OF STRAINED INAS/INP QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 60(7), 841-843.
LEE TW, HOUSTON PA, KUMAR R, YANG XF, HILL G, HOPKINSON M & CLAXTON PA (1992) CONDUCTION-BAND DISCONTINUITY IN INGAP/GAAS MEASURED USING BOTH CURRENT-VOLTAGE AND PHOTOEMISSION METHODS. APPL PHYS LETT, 60(4), 474-476.
YANG YF, HOUSTON PA & HOPKINSON M (1992) QUASI-BALLISTIC ELECTRON-TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. ELECTRON LETT, 28(2), 145-147.
SEARLE TM, HOPKINSON M, JACKSON WA, RHODES AJ & DIPROSE GK (1991) ON THE LOW-TEMPERATURE EFFICIENCY OF PHOTOLUMINESCENCE IN A-SI-H AND OTHER MATERIALS. PHILOS MAG B, 63(1), 179-191.
PINDORIA G, HOUGHTON RF, HOPKINSON M, WHALL T, KUBIAK RAA & PARKER EHC (1990) PARTICULATE CONTAMINATION IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 8(1), 21-27.
Mattey NL, Hopkinson M, Houghton RF, Dowsett MG, McPhail DS, Whall TE, Parker EHC, Booker GR & Whitehurst J (1990) P-type delta doping in silicon MBE. Thin Solid Films, 184(1-2), 15-19.
Houston PA, Lee TW, Kumar R, Hill G, Hopkinson M & Claxton PA (1990) Transport and related properties of InP based HBTs. IEE Colloquium (Digest)(111).
HOPKINSON M, SEARLE TM, LECOMBER PG & GIBSON RA (1987) PHOTOLUMINESCENCE PROPERTIES OF A-(SI/SIN)-H MULTILAYERS - A COMPARISON WITH BULK ALLOYS. J NON-CRYST SOLIDS, 97-8, 883-886.
SIDEBOTHAM EC, PEAKER AR, HOPKINSON M, HOUGHTON R, PATEL G, PARKER EHC & WHALL TE (1987) THE EFFECT OF SUBSTRATE-TEMPERATURE ON DEEP STATES IN MBE SILICON. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 134(8B), C545-C545.
SMITH D, HOUGHTON R, HOPKINSON M, PARKER EHC & WHALL TE (1987) CHARACTERIZATION OF ABRUPT P-N-JUNCTIONS PREPARED BY SILICON MBE. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 134(8B), C547-C547.
Searle TM, Hopkinson M, Edmeades M, Kalem S, Austin IG & Gibson RA (1987) RECOMBINATION IN a-Si:H BASED MATERIALS: EVIDENCE FOR TWO SLOW RADIATIVE PROCESSES.. Disord Semicond.
LECOMBER PG, SPEAR WE, GIBSON RA, HOPKINSON M, BHAT PK, SEARLE TM & AUSTIN IG (1985) ELECTRICAL, OPTICAL AND LUMINESCENCE PROPERTIES OF A-SI/SIN MULTILAYERS. J NON-CRYST SOLIDS, 77-8, 1081-1084.
HOPKINSON M, SEARLE TM, AUSTIN IG & RHODES AJ (1985) A COMPARISON OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN A-SI P-I-N JUNCTIONS. J NON-CRYST SOLIDS, 77-8, 695-698.
Wang Y-R, Han IS & Hopkinson M () Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics. Nanophotonics, 0(0).
() In-Situ Pulsed Laser Interference Nanostructuring of Semiconductor Sur-faces. Journal of Laser Micro/Nanoengineering.
Felici M, Pettinari G, Biccari F, Boschetti A, Younis S, Birindelli S, Gurioli M, Vinattieri A, Gerardino A, Businaro L , Hopkinson M et al () Broadband enhancement of light-matter interaction in photonic crystal cavities integrating site-controlled quantum dots. Physical Review B, 101(20).
Puebla J, Chekhovich EA, Hopkinson M, Senellart P, Lemaitre A, Skolnick MS & Tartakovskii AI () Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under non-resonant ultra-low power optical excitation. Phys. Rev. B, 88, 045306. View this article in WRRO
Chekhovich EA, Krysa AB, Hopkinson M, Senellart P, Lemaitre A, Skolnick MS & Tartakovskii AI () Isotope sensitive measurement of the hole-nuclear spin interaction in quantum dots. Nature Physics, 9, 74-78.
Chekhovich EA, Kavokin KV, Puebla J, Krysa AB, Hopkinson M, Andreev AD, Sanchez AM, Beanland R, Skolnick MS & Tartakovskii AI () High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures. Nature Nanotechnology, 7, 646.
Hopkinson M, WANG Y, Olaizola S, Han I & Jin C () Direct Patterning of Periodic Semiconductor Nanostructures Using Single-Pulse Nanosecond Laser Interference. Optics Express.

Chapters

Gutiérrez M, Herrera M, Ross I, González D, Hopkinson M & García R (2018) Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission electron microscopy, Microscopy of Semiconducting Materials 2003 (pp. 143-146). CRC Press
Jin C-Y, Hopkinson M, Kojima O, Kita T, Akahane K & Wada O (2012) Quantum Dot Switches: Towards Nanoscale Power-Efficient All-Optical Signal Processing, Quantum Dot Devices (pp. 197-221). Springer New York
Chia CK & Hopkinson M (2012) Catastrophic Optical Damage in Quantum Dot Lasers, Quantum Dot Devices (pp. 93-108). Springer New York
Miguel-Sánchez J & Hopkinson M (2007) Nitrides And Dilute Nitrides: Growth, Physics And Devices
Meyer JR, Vurgaftman I, Olafsen LJ, Aifer EH, Bewley WW, Felix CL, Lin C-H, Zhang D, Yang RQ, Pei SS , Vodopyanov KL et al (1998) Phase-Matched Second-Harmonic and Cascade Laser Mid-IR Sources, Intersubband Transitions in Quantum Wells: Physics and Devices (pp. 22-29). Springer US
Cullis AG & Midgley PA () Microscopy of Semiconducting Materials 2003 CRC Press
Herrera M, Gonzalez D, Hopkinson M, Liu HY & Garcia R () Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells, Dilute III-V Nitride Semiconductors and Material Systems (pp. 199-221). Springer Berlin Heidelberg
Herrera M, Ramasse QM, Browning ND, Pizarro J, Galindo P, Gonzalez D, Garcia R, Du MW, Zhang SB & Hopkinson M () Analysis of the mechanism of N incorporation in N-doped GaAs quantum wells, EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany (pp. 119-120). Springer Berlin Heidelberg

Conference proceedings papers

Wang Y-R, Han IS & Hopkinson M (2023) Surface Nano-Structuring of Semiconductors by Nanosecond Pulsed Laser Interference. 2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 31 July 2023 - 4 August 2023.
Wang Y, Hopkinson M, Han IS, Behera S & Jin C (2020) Directed self-assembly of InAs quantum dots using in situ interference lithography. Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 1 February 2020 - 6 February 2020.
Francis H, Chen S, Che K-J, Zhang X, Hopkinson M & Jin C (2020) Generating optical frequency combs via nanoscale photonic structures. Physics and Simulation of Optoelectronic Devices XXVIII, 1 February 2020 - 6 February 2020.
Wang Y, Hopkinson M, Han IS & Jin C (2020) In-situ laser interference patterning of MBE growth surfaces. Laser-based Micro- and Nanoprocessing XIV, 1 February 2020 - 6 February 2020.
Behera S, Wang Y, Han IS, Jin C & Hopkinson M (2020) Fabrication of sub-micrometer periodic nanostructures using pulsed laser interference for efficient light trapping in optoelectronic devices. Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXV, 1 February 2020 - 6 February 2020.
Chen S, Francis H, Ho C-H, Che K, Wang Y, Hopkinson M, Zhang S, Jin C & Jin C (2018) Quality Factor Control in Laterally-Coupled Vertical Cavities. 2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 13 August 2018 - 17 August 2018.
Francis H, Chen S, Che K-J, Wang Y-R, Ho C-H, Hopkinson M, Jin C-Y & Jin C-Y (2018) Modulating Photonic Crystal Structures to Generate Optical Frequency Combs. 2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 13 August 2018 - 17 August 2018.
Breuer S, Rossetti M, Drzewietzki L, Montrosset I, Krakowski M, Hopkinson M & Elsaser W (2014) Investigations on photocurrent bi-stability of a two-color mode-locked quantum dot laser. 2014 16th International Conference on Transparent Optical Networks (ICTON), 6 July 2014 - 10 July 2014.
Zhang H, Ross IM, Hopkinson M, Zhang S & Walther T (2012) Quantum dot nucleation on focused ion beam patterned GaAs substrates. 15th European Microscopy Congress, Vol. 1(Physical Sciences: Applications) (pp 927-928). Oxford, 16 September 2012 - 21 September 2012.
Zhang, H , Ross, IM , Hopkinson, M , Zhang, S & Walther, T (2012) Study of controlled quantum dot formation on focused ion beam patterned GaAs substrates. IEEE-Nano2012, Vol. digital abstract booklet (pp 716-718). London, 20 August 2012 - 23 August 2012.
Revin DG, Commin JP, Cockburn JW, Zhang SY, Kennedy K, Krysa AB, Hopkinson M, Slight T, McKee A, Meredith W & Ironside C (2011) Recent progress in short wavelength quantum cascade lasers. 2011 IEEE Photonics Society Summer Topical Meeting Series (pp 57-58)
Revin DG, Commin JP, Cockburn JW, Zhang SY, Kennedy K, Krysa AB & Hopkinson M (2010) Short wavelength InP based quantum cascade lasers. Optics InfoBase Conference Papers
Revin DG, Commin JP, Cockburn JW, Zhang SY, Kennedy K, Krysa AB & Hopkinson M (2010) Short wavelength InP based quantum cascade lasers. Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Araujo D, El Bouayadi R, Gutierrez M, Pastore CE & Hopkinson M (2009) InAs/GaAs quantum dots morphology: Nanometric scale HAADF simulations. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, Vol. 165(1-2) (pp 88-93)
Kudrawiec R, Latkowska M, Sek C, Misiewicz J, Ibanez J, Henini M & Hopkinson M (2009) Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro-Photoluminescence. ACTA PHYSICA POLONICA A, Vol. 116(5) (pp 930-932)
Lenz A, Eisele H, Timm R, Ivanova L, Sellin RL, Liu HY, Hopkinson M, Pohl UW, Bimberg D & Dahne M (2009) Limits of In(Ga)As/GaAs quantum dot growth. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 246(4) (pp 717-720)
Marques FAM, Monte AFG & Hopkinson M (2009) Electric field effects on the carrier migration in self-assembled InAs/GaAs quantum dots. MICROELECTRONICS JOURNAL, Vol. 40(4-5) (pp 838-840)
Boyle SJ, Ramsay AJ, Kolodka RS, Oliviera JBB, Liu HY, Hopkinson M, Fox AM & Skolnick MS (2009) Two-colour photocurrent detection technique for coherent control of a single InGaAs/GaAs quantum dot. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 246(4) (pp 824-827)
Haxha V, Garg R, Migliorato MA, Drouzas IW, Ulloa JM, Koenraad PM, Steer MJ, Liu HY, Hopkinson MJ & Mowbray DJ (2009) Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers. MICROELECTRONICS JOURNAL, Vol. 40(3) (pp 533-536)
Hogg RA, Greenwood PDL, Childs DTD, Krstajic N, Kennedy K, Groom KM, Hugues M, Hopkinson M, Smith LE, Matcher SJ , Bonesi M et al (2009) GaAs Based Quantum Dot Superluminescent Diodes for Optical Coherence Tomography of Skin Tissue. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 426-431)
Greenwood PDL, Jiang Q, Childs DTD, Zhang Z, Groom KM, Kennedy K, Hugues M, Hopkinson M & Hogg RA (2009) Broad-band High Power Quantum Dot Superluminescent Diodes. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 604-605)
Krstajic N, Smallwood R, Childs DTD, Greenwood PDL, Hugues M, Kennedy K, Hopkinson M, Groom KM, Hogg RA, Smith LE , Matcher SJ et al (2009) Optical coherence tomography with high power quantum-dot superluminescent diodes. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 207-208)
Ibanez J, Alarcon-Llado E, Cusco R, Artus L, Henini M & Hopkinson M (2009) Dilute (In,Ga)(As,N) thin films grown by molecular beam epitaxy on (100) and non-(100) GaAs substrates: a Raman-scattering study. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 20 (pp 116-119)
Revin DG, Zhang SY, Commin JP, Cockburn JW, Kennedy K, Krysa AB & Hopkinson M (2009) Room Temperature InGaAs-AlAsSb Quantum Cascade Lasers Operating in 3-4 mu m Range. 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 (pp 844-845)
Boyle SJ, Ramsay AJ, Fox AM, Skolnick MS, Heberle AP & Hopkinson M (2009) Picosecond Coherent Control of Dressed States in a Single Quantum Dot. 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 (pp 2371-2372)
Haxha V, Garg R, Migliorato MA, Drouzas IW, Ulloa JM, Koenraad PM, Steer MJ, Liu HY, Hopkinson M & Mowbray DJ (2008) The use of Abell-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs. OPTICAL AND QUANTUM ELECTRONICS, Vol. 40(14-15) (pp 1143-1148)
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Qiu Y, Walther T, Liu HY, Jin CY, Hopkinson M & Cullis AG (2008) Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55 mu m. MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, Vol. 120 (pp 263-268)
Judson PDL, Groom KM, Childs DTD, Hopkinson M, Krstajic N & Hogg RA (2008) Multi-Contact Quantum Dot Superluminescent Diodes for Optical Coherence Tomography. 2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (pp 107-108)
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Smowton PM, George AA, Sandall IC, Liu HY & Hopkinson M (2007) Identifying the origin of non-radiative recombination in ln(Ga)As quantum dot lasers. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 429-430)
Revin DM, Cockburn JW, Steer MJ, Zhang S, Wilson LR, Hopkinson M & Airey RJ (2007) Short wavelength InGaAs-AlAsSb-InP quantum cascade lasers. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 705-706)
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Smowton PM, Sandall IC, Mowbray DJ, Liu HY & Hopkinson M (2007) Maximising the gain - Optimising the carrier distribution in InGaAs quantum dot lasers. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6468
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Revin DG, Wilson LR, Zibik EA, Green RP, Cockburn JW, Steer MJ, Airey RJ, Hopkinson M, Offermans P, Koenraad PM & Wolter JH (2005) InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 mu m. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 (pp 248-250)
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Navaretti P, Liu H, Hopkinson M, Gutierrez M, David JPR, Hill G, Herrera M, Gonzalez D & Garcia R (2004) Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 301-304)
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Finley JJ, Sabathil M, Oulton R, Tartakovskii AI, Mowbray DJ, Skolnick MS, Liew S, Migliorato M, Hopkinson M & Vogl P (2004) Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 199-203)
Zibik EA, Wilson LR, Green RP, Wells JPR, Phillips PJ, Carder DA, Cockburn JW, Skolnick MS, Steer MJ, Liu HY & Hopkinson M (2004) Polaron relaxation dynamics in InAs/GaAs self-assembled quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 21(2-4) (pp 405-408)
Tartakovskii A, Cahill J, Whittaker D, Wells J-P, Fox M, Mowbray D, Skolnick M, Groom K, Steer M & Hopkinson M (2004) Long-lived spin coherence and temperature-induced dephasing in InAs quantum dots measured via quantum beats. Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, 2004.
Cullis AG, Norris DJ, O'Neill JP, Ross IM, Migliorato MA, Hopkinson M, Parbrook PJ, Wang T & Walther T (2004) Segregation in compound semiconductors: the Stranski-Krastanow epitaxial transition and electron beam damage processes. 13th European Microscopy Congress (EMC 2004), Vol. 2 (Materials Sciences) (pp 417-418). Herentals, 22 August 2004 - 27 August 2004.
Tartakovsk AI, Cahill J, Whittaker DM, Wells JPR, Fox AM, Mowbray DJ, Skolnick MS, Groom KM, Steer MJ & Hopkinson M (2004) Long-lived spin coherence and temperature-induced dephasing in InAs quantum dots measured via quantum beats. OSA Trends in Optics and Photonics Series, Vol. 97 (pp 667-668)
Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) Low noise GaAs-based avalanche photodiodes for long wavelength applications. Device Research Conference - Conference Digest, DRC (pp 79-80)
Herrera M, Gonzalez D, Liu HY, Gutierrez M, Hopkinson M & Garcia R (2004) Composition modulation and growth-associated defects in GaInNAs/GaAs multi quantum wells. ELECTRON MICROSCOPY AND ANALYSIS 2003(179) (pp 103-106)
Walker CL, Sandall IC & Smowton PM (2004) Improved gain and loss performance of 1.3 mu m quantum dot lasers using high growth temperature GaAs Spacer layer. 2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 212-213)
Smowton PM, Pearce EJ, Lutti J, Matthews DR, Summers HD, Lewis GM, Blood P, Hopkinson M & Krysa A (2004) Carrier distribution, spontaneous emission and gain in self assembled quantum dot lasers. NOVEL IN-PLANE SEMICONDUCTOR LASERS III, Vol. 5365 (pp 86-95)
Liu HY, Sun HD, Navaretti P, Ng JS, Hopkinson M, Clark AH & Dawson MD (2004) 1.55-mu m GaInNAs/GaAs multiple quantum wells with GaInNAs quaternary barrier and space layer. SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials (pp 189-193)
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Zibik EA, Green RP, Wilson LR, Wells JPR, Phillips PJ, Carder DA, Cockburn JW, Steer NJ & Hopkinson M (2004) AlAs-like TO-phonon dephasing time in high al content AlGaAs. 11TH INTERNATIONAL CONFERENCE ON PHONON SCATTERING IN CONDENSED MATTER, PROCEEDINGS (pp 2686-2689)
Tartakovskii AI, Groom KM, Adawi AM, Lemaitre A, Mowbray DJ, Skolnick MS & Hopkinson M (2004) Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments. ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, Vol. 5352 (pp 348-354)
Migliorato MA, Navaretti P, Norris DJ, Liew SL, Cullis AG, Liu HY, Steer MJ & Hopkinson M (2003) Optimisation of the optical emission of bilayers of quantum dots. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003(180) (pp 103-106)
Gutierrez M, Herrera M, Ross I, Gonzalez D, Hopkinson M & Garcia R (2003) Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission electron microscopy. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003(180) (pp 143-146)
Adawi AM, Zibik EA, Wilson LR, Lemaitre A, Sheng WD, Cockburn JW, Skolnick MS, Leburton JP, Hopkinson M, Hill G , Liew SL et al (2003) Observation of in-plane polarized intersublevel absorption in strongly coupled InGaAs/GaAs self assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 238(2) (pp 341-344)
Koenraad PM, Bruls DM, Davies JH, Gill SPA, Long F, Hopkinson M, Skolnick M & Wolter JH (2003) Composition profiling at the atomic scale in III-V nanostructures by cross-sectional STM. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 17(1-4) (pp 526-532)
Houlihan J, Tanguy Y, O’Brien D, Huyet G, Smowton P, Pearce E & Hopkinson M (2003) Transverse mode structure of broad area quantum dot edge emitting lasers emitting at 1060 nm. Frontiers in Optics, 2003.
Smowton PM, Pearce EJ & Hopkinson M (2003) Carrier distribution and self heating in quantum dot and quantum well lasers. OSA Trends in Optics and Photonics Series, Vol. 88 (pp 684-685)
Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 263-266)
Bruls DM, Koenraad PM, Davies JH, Gill SPA, Long F, Hopkinson M, Skolnick M, Wolter JH & Devreese JT (2003) Direct composition proriling in III-V nanostructures by cross-sectional STM. PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS, Vol. 171 (pp 77-84)
Cockburn JW, Wilson LR, Carder DA, Green RP, Revin DG, Hopkinson M, Steer MJ, Airey R & Hill G (2003) The effect of intervalley scattering on the performance of GaAs-AlAs quantum cascade lasers. PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS, Vol. 171 (pp 117-123)
Smowton PM, Pearce EJ & Hopkinson M (2003) Carrier Distribution and Self Heating in Quantum Dot and Quantum Well Lasers. Optics InfoBase Conference Papers
Herrera M, Gutierrez M, Gonzalez D, Aragon G, Izpura I, Hopkinson M & Garcia R (2002) The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures. MICROELECTRONICS JOURNAL, Vol. 33(7) (pp 559-563)
Fleischmann T, Ulloa JM, Moran M, Rees GJ, Woodhead J & Hopkinson M (2002) Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator. MICROELECTRONICS JOURNAL, Vol. 33(7) (pp 547-552)
Gutierrez M, Herrera M, Gonzalez D, Aragon G, Sanchez JJ, Izpura I, Hopkinson M & Garcia R (2002) Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 mu m operation. MICROELECTRONICS JOURNAL, Vol. 33(7) (pp 553-557)
Matthews DR, Summers HD, Smowton PM, Rees P & Hopkinson M (2002) Analysis of quantum dot dynamics via q-switching. Nonlinear Optics: Materials, Fundamentals and Applications, 2002.
Wilson LR, Carder DA, Steer MJ, Cockburn JW, Hopkinson M, Chia CK, Hill G & Airey R (2002) Strategies for reducing the emission wavelength of GaAs-AlAs quantum cascade lasers. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 13(2-4) (pp 835-839)
Ashmore AD, Finley JJ, Oulton R, Fry PW, Lemaitre A, Mowbray DJ, Skolnick MS, Hopkinson M, Buckle PD & Maksym PA (2002) Optical properties of single charge tuneable InGaAs quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 13(2-4) (pp 127-130)
Cullis AG, Norris DJ, Walther T, Migliorato MA & Hopkinson M (2002) Epitaxial island growth and the Stranski-Krastanow transition. CURRENT ISSUES IN HETEROEPITAXIAL GROWTH-STRESS RELAXATION AND SELF ASSEMBLY, Vol. 696 (pp 3-10)
Matthews DR, Summers HD, Smowton PM, Rees P & Hopkinson M (2002) Analysis of quantum dot dynamics via q-switching. Optics InfoBase Conference Papers (pp 334-336)
Smowton PM, Pearce EJ, Ning Y, Herrmann E & Hopkinson M (2001) Filamentation and linewidth enhancement factor In InGaAs quantum dot lasers. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170), 11 May 2001 - 11 May 2001.
Herrmann E, Smowton PM, Ning Y, Summers HD, Blood P & Hopkinson M (2001) Optical mode loss and gain of multiple layer quantum dot lasers. Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170), 11 May 2001 - 11 May 2001.
Gutierrez M, Gonzalez D, Aragon G, Hopkinson M & Garcia R (2001) Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 80(1-3) (pp 27-31)
Chen X, Dawson P, Godfrey MJ & Hopkinson M (2001) Temperature dependent optical properties of InAs/AlGaAs quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(1) (pp 107-110)
Yuan ZL, Foo ERAD, Ryan JF, Mowbray DJ, Skolnick MS & Hopkinson M (2001) Recombination of many-particle states in InAs self-organized quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 409-412)
Fry PW, Mowbray DJ, Itskevich IE, Skolnick MS, Barker JA, O'Reilly EP, Hopkinson M, Al-Khafaji M, David JPR, Cullis AG & Hill G (2001) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 497-502)
Finley JJ, Lemaitri A, Ashmore AD, Mowbray DJ, Skolnick MS, Hopkinson M & Krauss TF (2001) Excitation and relaxation mechanisms in single In(Ga)As quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 373-378)
Yuan ZL, Foo ERAD, Ryan JF, Mowbray DJ, Skolnick MS & Hopkinson M (2001) Bandgap renormalization and carrier relaxation in self-organized InAs quantum dots. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, Vol. 87 (pp 1131-1132)
Bruls DM, Vugs JWAM, Koenraad PM, Skolnick MS, Hopkinson M & Wolter JH (2001) Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STM (pp 359-360)
Herrera M, Gutierrez M, Gonzalez D, Aragon G, Hopkinson M & Garcia R (2001) Barrier thickness influence on plastic relaxation in (111)B misoriented InGaAs/GaAs double quantum wells. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001(169) (pp 133-136)
Gutierrez M, Gonzalez D, Aragon G, Hopkinson M, Fleischmann T & Garcia R (2001) Strain relaxation behaviour in InxGa1-xAs quantum wells on misorientated GaAs (111)B substrates. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001(169) (pp 137-140)
Walther T, Cullis AG, Norris DJ & Hopkinson M (2001) How InGaAs islands form on GaAs substrates: the missing link in the explanation of the Stranski-Krastanow transition. MICROSCOPY OF SEMICONDUCTING MATERIALS 2001(169) (pp 85-88) View this article in WRRO
Lemaitre A, Finley JJ, Ashmore AD, Mowbray DJ, Skolnick MS, Itskevich IE, Hopkinson M & Krauss TF (2001) Optical spectroscopy of single InAs quantum dots: excitation and relaxation mechanisms. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, Vol. 87 (pp 1195-1196)
Ng BK, David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Hopkinson M (2001) Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46)
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Mowbray DJ, Harris L, Fry PW, Ashmore AD, Parnell SR, Finley JJ, Skolnick MS, Hopkinson M, Hill G & Clark J (2000) InAs-GaAs self-assembled quantum dot lasers: physical processes and device characteristics. PHYSICA E, Vol. 7(3-4) (pp 489-493)
Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Barker JA, O'Reilly EP, Wilson LR, Maksym PA, Hopkinson M, Al-Khafaji M , David JPR et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment. PHYSICA E, Vol. 7(3-4) (pp 408-412)
Ozanyan KB, Parbrook PJ, Hopkinson M & Whitehouse CR (2000) Static and growing InP and InAs surfaces: reflection-anisotropy spectroscopy under the conditions of solid-source MBE. THIN SOLID FILMS, Vol. 364(1-2) (pp 6-11)
Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Barker J, O'Reilly EP, Hopkinson M, Al-Khafaji M, Cullis AG, Hill G & Clark JC (2000) Quantum confined Stark effect and permanent dipole moment of InAs-GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 178(1) (pp 269-275)
Yuan ZL, Foo ERAD, Ryan JF, Mowbray DJ, Skolnick MS & Hopkinson M (2000) Dynamical band gap renormalization in self-organized InAs/GaAs quantum dots. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol. 178(1) (pp 345-348)
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Skolnick MS, Fry PW, Itskevich IE, Mowbray DJ, Barker JA, O'Reilly EP, Hopkinson M, Al-Khafaji M, Cullis AG, Hill C & Clark JC (2000) The stark effect and electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots. OPTICAL PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES, Vol. 81 (pp 337-346)
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Yuan ZL, Foo ERAD, Ryan JF, Mowbray DJ, Skolnick MS & Hopkinson M (1999) Many-body effects in carrier capture and energy relaxation in self-organized InAs/GaAs quantum dots. PHYSICA B, Vol. 272(1-4) (pp 12-14)
Hopkinson M, Sanchez JJ, Gutierrez M, Gonzalez D, Aragon G, Izpura I & Garcia R (1999) Optical properties of InxGa1-xAs/GaAs MQW structures on (111)B GaAs grown by MBE: dependence on substrate miscut. JOURNAL OF CRYSTAL GROWTH, Vol. 202 (pp 1085-1088)
Gutierrez M, Gonzalez D, Aragon G, Sanchez JJ, Izpura I, Hopkinson M & Garcia R (1999) Influence of substrate misorientation on the structural characteristics of InGaAs GaAs MQW on (111)B GaAs grown by MBE. THIN SOLID FILMS, Vol. 343 (pp 558-561)
McGow FJ, Martin RW & Hopkinson M (1999) Optical investigation of strain-balanced superlattices. SUPERLATTICES AND MICROSTRUCTURES, Vol. 25(1-2) (pp 413-417)
Al-Khafaji MA, Cullis AG, Hopkinson M, Mowbray DJ & Skolnick MS (1999) Effect of growth rate on the morphology and composition of InAs quantum dots grown on GaAs by MBE. MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS(164) (pp 111-116)
Al-Khafaji MA, Cullis AG, Hopkinson M, Wilson LR, Parnell SR, Mowbray DJ & Skolnick MS (1999) TEM nanoscale analysis of InAs quantum dots grown on GaAs by MBE. ELECTRON MICROSCOPY AND ANALYSIS 1999(161) (pp 585-588)
Itskevich IE, Trojan IA, Lyapin SG, Steer MJ, Wilson LR, Mowbray DJ, Skolnick MS, Hopkinson M, Eaves L & Main PC (1999) Excited states in self-assembled InAs/GaAs quantum plots under high pressure. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 211(1) (pp 73-77)
Krier A, Chubb D, Krier SE, Hopkinson M & Hill G (1998) Light sources for wavelengths > 2 mu m grown by MBE on InP using a strain relaxed buffer. IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 145(5) (pp 292-296)
Stallard WG, Plaut AS, Thoms S, Holland MC, Beaumont SP, Stanley CR & Hopkinson M (1998) Strain-induced quantum confinement of electron gases. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 2(1-4) (pp 272-276)
Li YB, Cockburn JW, Duck JP, Skolnick MS, Birkett MJ, Larkin IA, Hopkinson M, Grey R & Hill G (1998) Population inversion and intersubband electroluminescence in GaAs/AlGaAs triple barrier tunnelling structures. PHYSICA E, Vol. 2(1-4) (pp 473-477)
Wilson LR, Mowbray DJ, Skolnick MS, Harris L, Morifuji M, Larkin IA, Steer MJ & Hopkinson M (1998) Magneto-optical spectroscopy of InAs/GaAs self-organised quantum dots. PHYSICA E, Vol. 2(1-4) (pp 689-693)
Li YB, Cockburn JW, Larkin IA, Duck JP, Birkett MJ, Skolnick MS, Hopkinson M, Grey R & Hill G (1998) Inversion of electron sub-band population in a GaAs/AlGaAs triple barrier tunnelling structure. SOLID-STATE ELECTRONICS, Vol. 42(7-8) (pp 1533-1537)
Vodopyanov KL, O'Neill K, Serapiglia GB, Phillips CC, Hopkinson M, Vurgaftman I & Meyer IR (1998) Efficient intersubband-based SHG in semiconductor quantum wells. Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178), 3 May 1998 - 8 May 1998.
Parbrook PJ, Ozanyan KB, Hopkinson M, Whitehouse CR, Sobiesierski Z & Westwood DI (1998) Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. APPLIED SURFACE SCIENCE, Vol. 123 (pp 313-318)
Whitaker MF, Dunstan DJ & Hopkinson M (1998) Band offsets in near-GaAs alloys. COMPOUND SEMICONDUCTORS 1997, Vol. 156 (pp 279-282)
Chia CK, David JPR, Rees GJ, Plimmer SA, Hopkinson M, Grey R & Robson PN (1998) Avalanche multiplication in sub-micron AlxGa1-xAs/GaAs heterostructures. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 391-394)
Kim S, Cho W, Zhang X, Hopkinson M & Gopinath A (1998) Design of polarization insensitive semiconductor optical amplifiers at 1300 nm. Optics InfoBase Conference Papers (pp 324-326)
Al-Khafaji MA, Cullis AG, Hopkinson M, Mowbray DJ, Migliorato M, Wilson LR, Skolnick MS & Whitehouse CR (1998) TEM observations of the variation in the configuration of self-assembled InAs quantum dots on GaAs. ELECTRON MICROSCOPY 1998, VOL 3 (pp 371-372)
Boroumand FA, Jostock M, Hopkinson M, Kordos P, Weber E & Swanson JG (1997) Electrical behaviour of GaAs MESFETs formed on high and low temperature GaAs buffer layers. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO (pp 303-308)
Plaut AS, Patel S, Stallard WG, Hawrylak P, Lage H, Grambow P, Heitmann D, von Klitzing K, Thoms S, Holland MC , Beaumont SP et al (1997) Magneto-optics of zero-dimensional electron systems. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 1(1-4) (pp 191-197)
Hopkinson M & David JPR (1997) Incorporation of As-2 in InAsxP1-x and its application to InAsxP1-x/InP quantum well structures. JOURNAL OF CRYSTAL GROWTH, Vol. 175 (pp 1033-1038)
Griffin P, Ballard I, Barnham K, Nelson J, Zachariou A, Button C, Hopkinson M & Pate M (1997) Advantages of quantum well solar cells for TPV. Third NREL Conference on thermophotovoltaic generation of electricity
Martin RW, McGow F, Hopkinson M & David JPR (1997) All-optical modulation near 1.55 mu m using In1-x-yGaxAlyAs coupled quantum wells. COMPOUND SEMICONDUCTORS 1996(155) (pp 539-542)
Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ, Robson PN, Herbert DC, Higgs AW & Wight DR (1997) Impact ionisation and temperature dependence of breakdown in Ga0.52In0.48P. COMPOUND SEMICONDUCTORS 1996(155) (pp 585-588)
Murray RT, Kiely CJ & Hopkinson M (1997) Crack interactions in tensile-strained epilayers. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997(157) (pp 169-172)
Murray RT, Hopkinson M & Kiely CJ (1997) Profiles of cracks formed in tensile epilayers of III-V compound semi-conductors. ELECTRON MICROSCOPY AND ANALYSIS 1997(153) (pp 425-428)
Mowbray DJ, Kowalski OP, Cockburn JW, Skolnick MS, Hopkinson M & David JPR (1997) Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, Vol. 3001 (pp 135-146)
Boroumand FA, Khalid AH, Hopkinson M & Swanson JG (1996) Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures. IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (pp 51-54)
Zachariou A, Barnham KWJ, Griffin P, Nelson J, Button C, Hopkinson M, Pate M & Epler J (1996) A new approach to p-doping and the observation of efficiency enhancement in InP/InGaAs quantum well solar cells. Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 13 May 1996 - 17 May 1996.
David JPR, Ghin R, Hopkinson M, Pate MA & Robson PN (1996) Impact ionisation coefficients in (AlxGa1-x)(0.52)In0.48P. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 569-574)
Traynor NJ, Snelling MJ, Harley RT, Warburton RJ & Hopkinson M (1996) Investigation of g-factors, Zeeman splittings, exchange interactions and field-dependent spin relaxation in III-V quantum wells. SURFACE SCIENCE, Vol. 362(1-3) (pp 435-438)
David JPR, Ghin R, Plimmer SA, Hopkinson M & Allan J (1996) Breakdown characteristics of (AlXGa1-X)(0.52)In0.48P p-i-n diodes. ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 256-260)
Peggs DW, Skolnick MS, Whittaker DM, Hogg RA, Willcox ARK, Mowbray DJ, Grey R, Rees GJ, Hart L, Hopkinson M , Hill G et al (1996) Wannier-Stark ladder spectra in InxGa1-xAs-GaAs strained layer piezo-electric superlattices. SOLID-STATE ELECTRONICS, Vol. 40(1-8) (pp 167-170)
Chen YH, Woodhead J, David JPR, Button CC, Hopkinson M, Roberts JS, Sale TE & Robson PN (1995) Visible vertical cavity surface emitting lasers at lambda<650 nm. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 12-16)
Martin RW, McGow F, Hopkinson M & David JPR (1995) Exciton effects in strain-balanced GaInAs/AlInAs and GaInAs/GaInAs coupled quantum wells.. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, Vol. 17(11-12) (pp 1607-1612)
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HOPKINSON M, DAVID JPR, KHOO EA, PABLA AS, WOODHEAD J & REES GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS (pp 299-302)
Murray RT, Kiely CJ, Hopkinson M & Goodhew PJ (1995) Crack formation in tensile strained III-V epilayers grown on InP substrates. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, Vol. 146 (pp 207-210)
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DAVID JPR, HOPKINSON M, GHIN R & PATE MA (1994) REVERSE BREAKDOWN CHARACTERISTICS IN INGA(AL)P INGAP P-I-N JUNCTIONS. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 403-406)
HOPKINSON M, DAVID JPR, KOWALSKI OP, MOWBRAY DJ & SKOLNICK MS (1994) GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINP/ALGAINP QUANTUM-WELLS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 551-554)
DELONG MC, MOWBRAY DJ, HOGG RA, SKOLNICK MS, WILLIAMS JE, MEEHAN K, KURTZ SR, OLSON JM, WU MC & HOPKINSON M (1994) THE BAND-GAP OF PERFECTLY DISORDERED GA0.52IN0.48P. 12TH NREL PHOTOVOLTAIC PROGRAM REVIEW(306) (pp 529-537)
Loh WH, Atkinson D, Morkel PR, Hopkinson M, Seeds AJ & Payne DN (1993) Passive mode locking of Er3+-doped-fiber lasers using a semiconductor saturable absorber and an integrated Bragg stack. Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication, 1993.
MURRAY RT, KIELY CJ, GOODHEW PJ & HOPKINSON M (1993) ELECTRON-MICROSCOPY STUDIES OF EPITAXIAL INGAALAS LAYERS GROWN ON INP(001) BY MOLECULAR-BEAM EPITAXY. ELECTRON MICROSCOPY AND ANALYSIS 1993(138) (pp 309-312)
WANG JN, STEEDS JW & HOPKINSON M (1993) THE STUDY OF MBE GROWN (001) INXGA1-XP/GAAS STRAINED-LAYER HETEROSTRUCTURES BY TEM AND CL. MICROSCOPY OF SEMICONDUCTING MATERIALS 1993(134) (pp 295-300)
Neilson DT, Ehrlich JE, Walker AC, Kennedy GT, Grant RS, Sibbett W, Hopkinson M & Pate M (1993) Optically Induced ElectronicNonlinearities and Passive Optical Bistability in InGaAs/InP Quantum Well Waveguides at 1.5μm. Optics InfoBase Conference Papers (pp 277-280)
DeLong MC, Viohl I, Ohlsen WD, Taylor PC, Dabkowski FP, Meehan K, Williams JE & Hopkinson M (1992) Microwave-modulated photoluminescence: technique and application to III-Vs (Poster Paper). Spectroscopic Characterization Techniques for Semiconductor Technology IV
DELONG MC, HOGG RA, MOWBRAY DJ, HOPKINSON M, SKOLNICK MS, OLSON JM, KURTZ SR & KIBBLER AE (1992) PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY IN ORDERED AND DISORDERED GA0.52IN0.48P. PHOTOVOLTAIC ADVANCED RESEARCH & DEVELOPMENT PROJECT, Vol. 268 (pp 332-337)
CLAXTON PA, HOPKINSON M, KOVAC J, HILL G, PATE MA & DAVID JPR (1991) QUANTUM-CONFINED STARK-EFFECT IN INGAAS/INP MULTIPLE QUANTUM-WELLS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. JOURNAL OF CRYSTAL GROWTH, Vol. 111(1-4) (pp 1080-1083)
SMITH D, HOUGHTON R, POWELL T, PARKER EHC & WHALL TE (1987) ELECTRICAL-PROPERTIES OF CAMEL DIODES SYNTHESIZED BY SI-MBE. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol. 134(8B) (pp C547-C547)
SIDEBOTHAM EC, PEAKER AR, HAMILTON B & PAWLIK M (1987) RECOMBINATION-GENERATION KINETICS IN MBE SILICON. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol. 134(8B) (pp C545-C545)
Thomson J, Summers H, Smowton P, Herrmann E, Blood P & Hopkinson M () Temperature dependence of the wavelength of quantum dot lasers. Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
Thomson J, Smowton P, Summers H, Herrmann E, Blood P & Hopkinson M () Intrinsic performance of InGaAs-GaAs quantum dot lasers. LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080)
Farley RJ, Haywood SK, Hewer VA, Hogg JHC, Stavrinou PN, Hopkinson M, David JPR & Pate M () A 25 period InAs/sub 0.54/P/sub 0.46//In/sub 0.89/Ga/sub 0.11/P MQW for 1.55 μm modulation grown by solid source MBE. Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129)
Guy P, Farley RJ, Haywood SK, Hewer VA, Hogg JHC, David JPR, Hopkinson M & Pate M () InAsP/In[Ga]P MQWs for 1.55 μm modulators grown by solid-source MBE. Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
Mottahedeh R, Haywood SK, Pattison DA, Kean PN, Bennion I, Hopkinson M, Prescott D & Pate M () Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW. Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society
Roberts JM, Harris JJ, Hopkinson M & Roberts C () A comparison of ∂-doped quantum well structures for power FET applications. Proceedings 1996 IEEE Hong Kong Electron Devices Meeting
Harris JJ, Roberts JM, Jaszek R & Hopkinson M () Strain-balanced quantum wells for power FET applications. Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95
Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G () Strain effects in InAsP/InP MQW modulators for 1.06 μm operation. Seventh International Conference on Indium Phosphide and Related Materials
Guy P, Woodbridge K & Hopkinson M () A comparison of material systems for quantum well 1.55 μm micro-resonator modulators. Conference on Lasers and Electro-Optics Europe
Stavrinou P, Haywood SK, Hart L, Zhang X, Hopkinson M, David JPR & Hill G () Varying strains in InAs/sub 1-x/P/sub x//InP multiple quantum well device structures. 1993 (5th) International Conference on Indium Phosphide and Related Materials
Stavrinou P, Haywood SK, Zhang X, Hopkinson M, Claxton PA, David JPR & Hill G () Photoconductivity of a strained InAs/InP superlattice in the 1.0-1.5 mu m region. LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
Hopkinson M, Claxton PA, David JPR, Hill G, Reddy M & Pate MA () High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy. [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

Working papers

Wu Y, Piper IM, Ediger M, Brereton P, Schmidgall ER, Eastham PR, Hugues M, Hopkinson M & Phillips RT (2011) Population inversion in a single InGaAs quantum dot using the method of adiabatic rapid passage. Physical Review Letters, 106.

Preprints

Waeber AM, Hopkinson M, Skolnick MS & Chekhovich EA (2017) Dynamical suppression of fluctuations in an interacting nuclear spin bath of a self-assembled quantum dot using multiple pulse nuclear magnetic resonance, arXiv.
Waeber AM, Hopkinson M, Farrer I, Ritchie DA, Nilsson J, Stevenson RM, Bennett AJ, Shields AJ, Burkard G, Tartakovskii AI , Skolnick MS et al (2015) Few-second-long correlation times in a quantum dot nuclear spin bath probed by frequency-comb NMR spectroscopy, arXiv.
Chekhovich EA, Hopkinson M, Skolnick MS & Tartakovskii AI (2014) Quadrupolar induced suppression of nuclear spin bath fluctuations in self-assembled quantum dots, arXiv.
Puebla J, Chekhovich EA, Hopkinson M, Senellart P, Lemaitre A, Skolnick MS & Tartakovskii AI (2013) Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under non-resonant ultra-low power optical excitation, arXiv.
Van Hattem B, Corfdir P, Brereton P, Pearce P, Graham AM, Stanley MJ, Hugues M, Hopkinson M & Phillips RT (2013) From the artificial atom to the Kondo-Anderson model: orientation dependent magneto-photoluminescence of charged excitons in InAs quantum dots, arXiv.
Chekhovich EA, Kavokin KV, Puebla J, Krysa AB, Hopkinson M, Andreev AD, Sanchez AM, Beanland R, Skolnick MS & Tartakovskii AI (2011) High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures, arXiv.
Zajac JM, Langbein W, Hugues M & Hopkinson M (2011) Polariton states bound to defects in GaAs/AlAs planar microcavities, arXiv.
Chekhovich EA, Krysa AB, Hopkinson M, Senellart P, Lemaitre A, Skolnick MS & Tartakovskii AI (2011) Isotope sensitive measurement of the hole-nuclear spin interaction in quantum dots, arXiv.
Piper IM, Eastham PR, Ediger M, Wilson AM, Wu Y, Hugues M, Hopkinson M & Phillips RT (2010) Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation, arXiv.
Wu Y, Piper IM, Ediger M, Brereton P, Schmidgall ER, Hugues M, Hopkinson M & Phillips RT (2010) Quantum state preparation in semiconductor dots by adiabatic rapid passage, arXiv.
Collins RJ, Clarke PJ, Fernandez V, Gordon KJ, Makhonin MN, Timpson JA, Tahraoui A, Hopkinson M, Fox AM, Skolnick MS & Buller GS (2010) Quantum key distribution system in standard telecommunications fiber using a short wavelength single-photon source, arXiv.
Brossard FSF, Xu XL, Williams DA, Hadjipanayi M, Hopkinson M, Wang X & Taylor RA (2010) Strongly coupled single quantum dot in a photonic crystal waveguide cavity, arXiv.
Ramsay AJ, Boyle SJ, Godden TM, Kolodka RS, Khatab AFA, Oliveira JBB, Skiba-Szymanska J, Liuc H-Y, Hopkinson M, Fox AM & Skolnick MS (2009) Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole, arXiv.
Makhonin MN, Skiba-Szymanska J, Skolnick MS, Liu H-Y, Hopkinson M & Tartakovskii AI (2009) Voltage controlled nuclear polarization switching in a single InGaAs quantum dot, arXiv.
Boyle SJ, Ramsay AJ, Bello F, Liu HY, Hopkinson M, Fox AM & Skolnick MS (2008) Two qubit conditional quantum logic operation in a single self-assembled quantum dot, arXiv.
Zibik EA, Grange T, Carpenter BA, Ferreira R, Bastard G, Vinh NQ, Phillips PJ, Steer MJ, Hopkinson M, Cockburn JW , Skolnick MS et al (2007) Intersublevel Polaron Dephasing in Self-Assembled Quantum Dots, arXiv.
Ramsay AJ, Boyle SJ, Kolodka RS, Oliveira JBB, Skiba-Szymanska J, Liu HY, Hopkinson M, Fox AM & Skolnick MS (2007) Fast optical preparation, control and read-out of single quantum dot spin, arXiv.
Makhonin MN, Tartakovskii AI, Drouzas I, Van'kov AB, Wright T, Skiba-Szymanska J, Russell A, Fal'ko VI, Skolnick MS, Liu H-Y & Hopkinson M (2007) Long nuclear spin decay times controlled by optical pumping in individual quantum dots, arXiv.
Sanvitto D, Laussy FP, Bello F, Whittaker DM, Fox AM, Skolnick MS, Tahraoui A, Fry PW & Hopkinson M (2006) Single-photon nonlinearity of a semiconductor quantum dot in a cavity, arXiv.
Tartakovskii AI, Wright T, Russell A, Fal'ko VI, Van'kov AB, Skiba-Szymanska J, Drouzas I, Kolodka RS, Skolnick MS, Fry PW , Tahraoui A et al (2006) Nuclear Spin Switch in Semiconductor Quantum Dots, arXiv.
Oulton R, Tartakovskii AI, Ebbens A, Finley JJ, Mowbray DJ, Skolnick MS & Hopkinson M (2004) Anomalous Stark Shifts in Single Vertically Coupled Pairs of InGaAs Quantum Dots, arXiv.

Teaching activities

EEE6215 (Nanoscale Electronic Devices)
EEE6216 (Energy efficient Semiconductor Devices)
EEE260/262 Solar Cell Design Project

Professional activities and memberships

Professor of Semiconductor Materials
Chair of the Undergraduate Examination Board
Departmental REF2021 champion

Research students

Student	Degree	Status	Primary/Secondary
Greenwood P D L	PhD	Graduated	Primary
Jin C	PhD	Graduated	Primary
Navaretti P	PhD	Graduated	Primary
Soong W M	PhD	Graduated	Secondary
Taghi Kahni A	PhD	Graduated	Secondary

Department of Electronic and Electrical Engineering

Department of Electronic and Electrical Engineering

Professor Mark Hopkinson

Books

Journal articles

Chapters

Conference proceedings papers

Working papers

Preprints

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